CEP9060R CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package & TO-220F full-pak for through hole. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM f 1.3 200 300 100 ±20 V W A A V W/ C 4 - 182 S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP9060R 55V 10.5mΩ 100A 10V 10V 0.5 300 e 100 e CEB9060R 55V 100A 10V Lead free product is acquired. 2004.September http://www.cetsemi.com CEF9060R 55V 100A e TO-220/263 TO-220F CEP9060R/CEB9060R CEF9060R 10.5mΩ 10.5mΩ Operating and Store Temperature Range Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS TJ,Tstg IAS -55 to 175 480 A mJ C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 0.75RθJC RθJA 480
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forwand Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 10.5 2 4 -100 100 mΩ V nA nA µA V S 4 - 183 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 55V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 62A VDS = 25V, ID = 62A VDD = 28V, ID = 62A, VGS = 10V, RGEN = 4.5Ω VDS = 44V, ID = 62A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 62A 2690 798 113 120 1.3 pF pF pF ns ns ns ns nC nC nC A V 8.8 CEP9060R/CEB9060R CEF9060R Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 260µH, IAS = 50A, VDD = 25V, RG = 25Ω , Starting TJ = 25 C e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area .