CEF860LT-G COMCHIP | Alldatasheet
Document overview
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Technical content
Features
-Soft recovery characteristic. -Low forward voltage. -Epoxy: UL 94V-0 rate flame retardant. -Mounting position: Any -Case: TO-220AC, molded plastic. -Weight: 2.14 grams -Low recovery loss. -High surge current capability. -Polarity: As marked on the body. ComchipS M D D i o d e S p e c i a l i s t Efficient Fast Recovery Rectifiers Dimensions in inches and (millimeter) TO-220AC (3.20) 0.126 0.055(1.40) 0.047(1.20) 0.148(3.80) 0.187(4.70) 0.531(13.50) 0.583(14.80) 0.610(15.50) 0.583(14.80) 0.157 (4.0) 0.230(5.80) 0.270(6.90) 0.108 (2.75) 0.153(3.90) 0.413(10.50) 0.024(0.60) 0.012(0.30) 0.051 0.043(1.10) 0.032(0.80) 0.102(2.60) 0.091(2.30)
0.04 MAX
(1.0) (1.30) Maximun Ratings (at TJ=25°C unless otherwise noted) Parameter Symbol Unit R Peak Reverse Voltageepetitive Average Rectified Forward Current VRRM I (AV)F IFSM V A A 600 125 CEF860LT-G @ TJ= 25°C Junction-to-Case Thermal Resistance, Per Leg RθJC 2.3 °C/W Junction-to Ambient Thermal Resistance, Per Leg RθJA °C/W70 @ TJ= 110°C Non-Repetitive Surge Forward Current TP = 10ms(50HZ) Sine Wave Operating Junction and Storage Temperatures TJ, TSTG -55 to +150 °C Avalanche Energy with Single Pulse ( L=40mH ) Maximum Power Dissipation EAS PD W mJ60
Electrical Characteristics and Curves (at TJ=25°C unless otherwise noted) Dynamic Recovery Characteristics QW-BE011 Page 2 REV:A Comchip Technology CO., LTD. ComchipS M D D i o d e S p e c i a l i s t Efficient Fast Recovery Rectifiers Parameter Conditions Symbol MIN. TYP. MAX. Unit VBreakdown Voltage IR = 100μA VBR 1.3 Forward Voltage μAVR = 600V IR 10 Reverse Leakage Current VR = TJ = 125°C600V , IR μA250 VIF = 8A VF 1.7 IF = 8A , TJ = 125°C V1.5VF 600 1.1 Parameter Conditions Symbol MIN. TYP. MAX. Unit nsReverse Recovery Time IF = 1A , VR = 30V , dIF/dt = -200A/μs trr 30 nCQrr 67 trr ns65 nstrr 32 IRRM A4.2 IRRM Qrr Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge Reverse Recovery Time Peak Recovery Current Reverse Recovery Charge IF = 8A , VR = 300V dIF/dt = -200A/μs IF = 8A , VR = 300V dIF/dt = -200A/μs , TJ=125°C A nC 6.2 201
RATING AND CHARACTERISTIC CURVES ( )CEF860LT-G 100 300100 200 400 500 600 Forward Current, ( A ) Forward Voltage , ( V )Drop Voltage Junction Capacitance, (pF) Case Temperature, (°C) Reverse Voltage, (V) Reverse Voltage, (V) 110 140120 130 150 160100 Reverse Current, (μA) Average Forward Current, ( A ) 400300 0.01 0.1 100 100 200 500 600 0.001 T =125°C J T =25°C J QW-BE011 Page 3 REV:A Comchip Technology CO., LTD. ComchipS M D D i o d e S p e c i a l i s t Efficient Fast Recovery Rectifiers FIG.2 - Typical Junction Capacitance vs. Reverse Voltage FIG.1 - Forward Current vs.Average Max. Allowable Cace Temperature FIG.3 - Typical Value of Reverse Current vs. Reverse Voltage TJ=150°C T =100°C J FIG.4 - Typical Forward Voltage Drop Characteristics Square Wave (D=0.5) Rated VR Applied 0.5 21 1.5 2.50 T =125°C J T =25°C J
C = Compchip Logo CEF860LT-G Part Number Marking code 8LFR060T C 8LFR060T Case Type TO-220AC 50 TUBE ( pcs ) TUBE PACK 2,000 BOX ( pcs ) QW-BE011 Page 4 REV:A Comchip Technology CO., LTD. ComchipS M D D i o d e S p e c i a l i s t Efficient Fast Recovery Rectifiers