CEF740A CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor | 6 |
FEATURES
¢ 400V ,5.4A , Rosion=600m2 + @VGS=10V. D Super high dense cell design for extremely low Rosion). High power and current handling capability. © T0-220F full-pak for through hole. G gs A S s TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25°C | 40 W Derate above 25°C wi Operating and Storage Temperature Range THERMAL CHARACTERISTICS 6-87
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Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
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3 I] | A | = 341 HN i
Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
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Figure 13. Normalized Thermal Transient Impedance Curve