CEF10N4 CET | Alldatasheet
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Technical content
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
450V ,5.6A ,RDS(ON) =7 0 0 m @ VGS =10V. Super high dense cell design for extremely low RDS(ON) . High power and current handling capability. TO-220F full-pak for through hole. ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS 30 V -Pulsed ID A IDM 5.6 A Drain-Source Diode Forward Current IS 5.6 A Maximum Power Dissipation PD W Operating and Storage Temperature RangeTJ,TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R įJC R įJA 2.8 /WC /WC Ω @Tc=25 C Derate above 25 C
0.36 W/ C
S G D 6-107 Sep. 2002 Ć TO-220F S D G CEF10N4
ELECTRICAL CHARACTERISTICS (T C =25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS =0 V ,ID = 250µA 450 V Zero Gate Voltage Drain Current IDSS VDS = 450V, VGS =0 V 25 µA Gate-Body Leakage IGSS VGS =3 0 V , VDS =0 V 100 nA ON CHARACTERISTICS a Gate Threshold Voltage VGS(th) VDS =V GS ,ID =2 5 0µA 24 V Drain-Source On-State Resistance R DS(ON) VGS = 10V, ID =6 A 600 700 m Ω On-State Drain Current ID(ON) VGS = 10V, VDS =1 0 V 10 A SForward Transconductance FSg VDS = 50V, ID =6 A SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD = 200V, ID = 10A, VGS =1 0 V , RGEN =9 . 1Ω 14 ns ns ns ns Total Gate Charge Gate-Source Charge Gate-Drain Charge Q g Q gs Q gd VDS =3 2 0 V ,ID =1 0 A , VGS =1 0 V 48 65 nC nC nC Fall Time 6-108 DRAIN-SOURCE AVALANCHE RATING a Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current EAS IAS 450 10 A mJ 500 100 3 6 100 125 VDD =50V, L=9.16mH R G =25 Ω Ć ĆĆ CEF10N4
b.Guaranteed by design, not subject to production testing. Figure 1. Output Characteristics Figure 2. Transfer Characteristics