CEF09N6 CET | Alldatasheet

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Technical content

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

600V , 6A ,RDS(ON) = 1.2 @V GS =10V. Super high dense cell design for extremely low RDS(ON) . High power and current handling capability. TO-220F full-pak for through hole. ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS 30 V -Pulsed ID A IDM A Drain-Source Diode Forward Current IS 5 A Maximum Power Dissipation PD W Operating and Storage Temperature RangeTJ,TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R įJC R įJA 2.6 /WC /WC Ω @Tc=25 C Derate above 25 C

0.38 W/ C

S G D 6-127 Jul. 2002 Ć TO-220F S D G CEF09N6

ELECTRICAL CHARACTERISTICS (T C 25 C unless otherwise noted)ȝ Parameter Symbol Condition Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING a OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS = 0V,ID = 250µA 600 V Zero Gate Voltage Drain Current IDSS VDS =6 0 0 V ,VGS =0 V 50 µA Gate-Body Leakage IGSS VGS =3 0 V , VDS =0 V 100 nA ON CHARACTERISTICS a Gate Threshold Voltage VGS(th) VDS =V GS ,ID = 250µA 24 V Drain-Source On-State Resistance R DS(ON) VGS =10V, ID =6 A 1.2 Ω On-State Drain Current ID(ON) VGS = 10V, VDS =1 0 V A SForward Transconductance FSg VDS = 50V, ID =6 A SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD = 200V, ID =9 A , VGS =1 0 V R GEN =9.1 23 45 ns ns ns ns 26 50 105 165 22 45 Total Gate Charge Gate-Source Charge Gate-Drain Charge Q g Q gs Q gd VDS =480V, ID = 9A, VGS =10V 73 85 nC nC nC Fall Time 6-128 Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current EAS IAS VDD =50V, L=23.4mH A mJ Ω R G =25Ω 500 1.0 ĆĆ 6.0 CEF09N6

b.Guaranteed by design, not subject to production testing. Figure 1. Output Characteristics Figure 2. Transfer Characteristics