CEF08N5 CET | Alldatasheet
Document overview
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Technical content
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
500V , 4.7A , RDS(ON)=0.85 @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS V -Pulsed ID 4.7 A IDM A Drain-Source Diode Forward Current IS 4.7 A Maximum Power Dissipation PD W Operating and Storage Temperautre Range TJ, TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 2.6 C C Ω @Tc=25 C Derate above 25 C 0.38 W/ C Drain Current-Continuous S G D 6-142 PRELIMINARY CEF08N5 Ć TO-220F S D G
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING a OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V,ID = 250µA 500 V Zero Gate Voltage Drain Current IDSS VDS = 500V, VGS = 0V µA Gate-Body Leakage IGSS VGS = 30V, VDS = 0V 100 nA ON CHARACTERISTICS a Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA V Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 4.8A 0.85 Ω On-State Drain Current ID(ON) VGS = 10V, VDS = 10V A S Forward Transconductance FS g VDS = 50V, ID = 6A SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD =250V, ID = 8A, VGS = 10V RGEN=9.1 ns ns ns ns 105 Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS =400V, ID = 8A, VGS =10V nC nC nC Fall Time 6-143 Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current EAS IAS VDD =50V, L=24mH A mJ Ω CEF08N5 RG=25Ω 500 0.76 Ć Ć