CEF04N6 CET | Alldatasheet
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Technical content
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 2.5A , RDS(ON) =2.5 @V GS =10V. Super high dense cell design for extremely low RDS(ON) . High power and current handling capability. TO-220F full-pak for through hole ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS 30 V -Pulsed ID 2.5 A IDM A Drain-Source Diode Forward Current IS 2.5 A Maximum Power Dissipation PD W Operating and Storage Temperautre RangeTJ,TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R įJC R įJA 3.6 /WC /WC Ω @Tc=25 C Derate above 25 C
0.28 W/ C
S G D 6-122 Feb. 2003 CEF04N6 Ć TO-220F S D G
ELECTRICAL CHARACTERISTICS (T C =25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING a OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS = 0V,ID = 250µA 600 V Zero Gate Voltage Drain Current IDSS VDS =6 0 0 V ,VGS =0 V 25 µA Gate-Body Leakage IGSS VGS =3 0 V , VDS =0 V 100 nA ON CHARACTERISTICS a Gate Threshold Voltage VGS(th) VDS =V GS ,ID = 250µA 24 V Drain-Source On-State Resistance R DS(ON) VGS =10V, ID =2 A 2.5 Ω On-State Drain Current ID(ON) VGS = 10V, VDS =1 0 V 2.8 A SForward Transconductance FSg VDS = 40V, ID =2 A SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD =300V, ID =4 A , VGS =1 0 V R GEN =25 25 50 ns ns ns ns 65 120 75 150 65 120 Total Gate Charge Gate-Source Charge Gate-Drain Charge Q g Q gs Q gd VDS =480V, ID = 4A, VGS =10V 24 31 nC nC nC Fall Time 6-123 Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current EAS IAS VDD =50V, L=27mH A mJ Ω R G =9.1Ω 500 2.2 ĆĆ CEF04N6