CED13N07 CET | Alldatasheet
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N - C h a n n e l E n h a n c e m e n t M o d e F i e l d E f f e c t T r a n s i s t o r CED13N07/CEU13N07
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70V, 11A, RDS(ON) = 127m Ω @ VG S = 1 0 V . Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 0.22 ±20 V W A A V W/ C 6 - 26 S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D RDS(ON) = 153m Ω @ VG S = 5 V . L e a d f r e e p r o d u c t i s a c q u i r e d . 2005.March http://www.cetsemi.com Operating and Store Temperature Range Single Pulsed Avalanche Current d IAS TJ,Tstg -55 to 150 10 A C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 4.5RθJC RθJA Single Pulsed Avalanche Energy d EAS 70 mJ
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 127 1 2.5 -100 100 mΩ V nA nA µA V S 6 - 27 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 5.5A VDS = 25V, ID = 5.5A VDD = 30V, ID = 6.8A, VGS = 5V, RGEN = 25Ω VDS = 48V, ID = 13.6A, VGS = 5V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 11A 413 105 5.5 2.1 2.3 6.4 1.5 pF pF pF ns ns ns ns nC nC nC A V 106 153 mΩ127VGS = 5V, ID = 5.5A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 870µH, IAS = 10A, VDD = 25V, RG = 25Ω , Starting TJ = 25 C