CED02N7 CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor CED02N7/CEU02N7
FEATURES
700V, 1.6A, RDS(ON) = 6.6Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 700 0.34 1.6 ±30 V W A A V W/ C 6 - 10 S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D Lead free product is acquired. 2004.October http://www.cetsemi.com Operating and Store Temperature Range Single Pulsed Avalanche Energy d Repetitive Avalanche Current a Repetitive Avalanche Energy a EAS TJ,Tstg EAR IAR -55 to 150 5.4 125 A mJ C mJ Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 2.9RθJC RθJA
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 6.6 2 4 -100 100 V nA nA µA V S 6 - 11 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 700 VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 1A VDS = 50V, ID = 1A VDD = 300V, ID = 2A, VGS = 10V, RGEN = 18Ω VDS = 480V, ID = 2A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 2A 220 2.5 8.6 1.6 1.5 0.7 pF pF pF ns ns ns ns nC nC nC A V 5.5 Ω Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 60mH, IAS = 2.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25 C