CEP06N5 CET | Alldatasheet
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Technical content
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
500V , 6.6A , RDS(ON) =1 @V GS =10V. Super high dense cell design for extremely low RDS(ON) . High power and current handling capability. TO-220 & TO-263 package. ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS 30 V -Pulsed ID 6.6 A IDM A Drain-Source Diode Forward Current IS 6.6 A Maximum Power Dissipation PD W Operating and Storage Temperautre RangeTJ,TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R įJC R įJA 1.2 62.5 /WC /WC Ω @Tc=25 C Derate above 25 C 104
0.83 W/ C
S G D 4-17 Oct. 2002 CEP06N5/CEB06N5 Ć CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 G S S D D G
ELECTRICAL CHARACTERISTICS (T C =25 C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATING a OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS = 0V,ID = 250µA 500 V Zero Gate Voltage Drain Current IDSS VDS =5 0 0 V ,VGS =0 V 25 µA Gate-Body Leakage IGSS VGS =3 0 V , VDS =0 V 100 nA ON CHARACTERISTICS a Gate Threshold Voltage VGS(th) VDS =V GS ,ID = 250µA 24 V Drain-Source On-State Resistance R DS(ON) VGS =10V, ID =4 A 1.0 Ω On-State Drain Current ID(ON) VGS = 10V, VDS =1 0 V A SForward Transconductance FSg VDS = 50V, ID =4 A SWITCHING CHARACTERISTICS b Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) tf VDD =250V, ID =6 A , VGS =1 0 V R GEN =18 23 45 ns ns ns ns 35 70 162 240 44 90 Total Gate Charge Gate-Source Charge Gate-Drain Charge Q g Q gs Q gd VDS =400V, ID = 6A, VGS =10V 54 65 nC nC nC Fall Time 4-18 Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current EAS IAS VDD =50V, L=24mH A mJ Ω CEP06N5/CEB06N5 R G =25Ω 500 0.85 ĆĆ