CEA3055L CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
D © 60V ,3.7A, Ros(on=100m2 @Vas=10V. Rosonj=120mMQ2 @Vas=4.5V. © High dense cell design for low Rosjon). Rugged and reliable. s a. Ss SOT-89 ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) ee Drain Current-Continuous* @Tu=125°C | o | sr [a | Drain-Source Diode Forward Current * Operating Junction and Storage Ty, Tse 65 to 150 °C Temperature Range , THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient * 9-12
ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) Pos [al] rin uso Dessonebeacomiige [ois] emma [a] @] |v ZeoGateVotage Dan Gurert [ess | vos-oouvesccv | [| 1 | ua | oaeduydee | ow | vonnivnoy |_| [ron Gate Twestodvoage | ves | veseVosb=zsora | 1 [127] 2 | v | pono [tees ses fonstaeoincuren | toon | voseiouvessv fo | | | a | Fond Tersonautace | Os | ossueata | 3 Lo | Is | [615 | oo | | - Vs = 25V, Ves = OV feces] a" CTateta | «| ol a | Voo=25V, | fs | | os | P69 | [0 | oo | os | | [6 | a | os | foalcaecrage | | fs [ee [rc | éaedenae | oe | Pet pe) 9-13
a.Surface Mounted on FR4 Board, t<10sec. b.Pulse Test:Pulse Width <300 us, Duty Cycle < 2%.
25 Wa 10 I
2 Perr Le |
Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Capacitance Figure 4. On-Resistance Variation with
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation
6 EL] [we | * CPP TT
Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
3 SS Sa, Se
8 Sy CCIE COSA
Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
25 SSeS eH F sa terochom A
Figure 13. Normalized Thermal Transient Impedance Curve