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Technical content

Features

■ RoHS compliant* ■ Protects four lines ■ Unidirectional and bidirectional confi gurations ■ ESD protection: 30 kV max.

Applications

■ Audio/video inputs ■ RS-232, RS-422 and RS-423 data lines ■ Portable electronics ■ Medical sensors CDNBS08-T03~T36C - TVS Diode Array Series *RoHS COMPLIANT *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications. General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Steering Diode/Transient Voltage Suppressor Array diodes for surge and ESD protection applications in an eight lead narrow body SOIC package size format. TheTransient Voltage Suppressor Array series offer a choice of voltage types ranging from 3 V to 36 V in unidirectional and bidirectional confi gurations. Bourns ® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their fl at confi guration minimizes roll away. The Bourns ® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements. 8765 1234 8765 1234 Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CDNBS08- UnitUni- T03 Bi- T03C Uni- T05 Bi- T05C Uni- T08 Bi- T08C Uni- T12 Bi- T12C Uni- T15 Bi- T15C Uni- T24 Bi- T24C Uni- T36 Bi- T36C Max. Clamping Voltage Typ. Clamping Voltage @ 8/20 µs V C @ IPP 1 VC 10.9 V @ 43 A 13.5 V @ 42 A 16.9 V @ 34 A 25.9 V @ 21 A 30.0 V @ 17 A 49.0 V @ 12 A 76.8 V @ 9 A V Max. Leakage Current @ VWM ID 125 20 10 1 1 1 1 µA Max. Cap. Bidirectional @ 0 V,

1 MHz C

J(SD) 450 308 300 105 80 50 45 pF ESD Protection per IEC 61000-4-2 Contact - Min. Contact - Max. Air - Min. Air - Max. ESD ±30 ±15 ±30 kV Peak Pulse Power (t p = 8/20 µs) 2 PPP 500 W Forward Voltage @ 100 mA, 300 µs - Square Wave 3 VF 1.5 V Notes: 1. See Pulse Wave Form. 2. See Peak Pulse Power vs. Pulse Time. 3. Only applies to unidirectional devices. 4. Part numbers with a “C” suffi x are bidirectional devices, i.e. CDNBS08-T03C. Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Max. Unit Operating Temperature T J -55 to +150 °C Storage Temperature TSTG -55 to +150 °C

Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications. CDNBS08-T03~T36C - TVS Diode Array Series Product Dimensions This is an RoHS compliant molded JEDEC narrow body SO-8 package with 100 % Sn plating on the lead frame. It weighs approximately 15 mg and has a fl ammability rating of UL 94V-0. Recommended Footprint How to Order CD NBS08 - T 03 C Common Code Chip Diode Package NBS08 = Narrow Body SOIC8 Package Model T = Transient Voltage Suppressor Working Peak Voltage 03 = 3 V RWM (Volts) Suffi x C = Bidirectional Diode Typical Part Marking Dimensions A 4.80 - 5.00 (0.189 - 0.197) B 3.81 - 4.00 (0.150 - 0.157) C 5.80 - 6.20 (0.228 ± 0.244) D 0.36 - 0.51 (0.014 - 0.020) E 1.35 - 1.75 (0.053 - 0.069) F 0.102 - 0.203 (0.004 - 0.008) G 0.25 - 0.50 (0.010 - 0.020) H 0.51 - 1.12 (0.020 - 0.044) I 0.190 - 0.229 (0.0075 - 0.0090) J 4.60 - 5.21 (0.181 - 0.205) K 0.28 - 0.79 (0.011 - 0.031) L 1.27 (0.050) AB CD E A B C G45 ° NOM. I H D K L MILLIMETERS (INCHES)DIMENSIONS = E F J 7 ° NOM. 3 PLCS. 7 ° NOM. 4 PLCS. 4 ° ± 4 ° Dimensions A 1.143 - 1.397 (0.045 - 0.065) B 0.635 - 0.889 (0.025 - 0.035) C 6.223 Min.(0.245) Min. D 3.937 - 4.191 (0.155 - 0.165) E 1.016 - 1.27 (0.040 - 0.050)

CDNBS08-T03~T36C - TVS Diode Array Series Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications. 10,000 1,000 100 10.01 10 100 10,000 1,000 PPP – Peak Pulse Power (kW) td – Pulse Duration (µs) 100 120 03 0 25201510 IPP – Peak Pulse Current (% of IPP) t – Time (µs) Test Waveform Parameters tt = 8 µs td = 20 µs500 W, 8/20 µs Waveform tt et td = t|IPP/2 Performance Graphs Peak Pulse Power vs Pulse Time Pulse Waveform Block Diagram Power Derating Curve 100 0 25 50 75 100 125 150 % of Rated Power TL – Lead Temperature (°C) Average Power Peak Pulse Power 8/20 µs 8765 1234 8765 1234 Unidirectional Bidirectional Device Pinout Pin Function

1 I/O 1

2 I/O 2

3 I/O 3

4 I/O 4

5 GND

6 GND

7 GND

8 GND

CDNBS08-T03~T36C - TVS Diode Array Series Packaging Information The product is packaged in tape and reel format per EIA-481 standard. DIMENSIONS: MM (INCHES) Item Symbol NSOIC 8L Carrier Width A 6.7 ± 0.10 (0.264 ± 0.004) Carrier Length B 5.5 ± 0.10 (0.217 ± 0.004) Carrier Depth C 2.10 ± 0.10 (0.083 ± 0.004) Sprocket Hole d 1.55 ± 0.05 (0.061 ± 0.002) Reel Outside Diameter D 330 (12.992) Reel Inner Diameter D1 80.0 (3.1500) MIN. Feed Hole Diameter D 2 13.0 ± 0.20 (0.512 ± 0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 3.50 ± 0.05 (0.138 ± 0.002) Punch Hole Pitch P 8.00 ± 0.10 (0.315 ± 0.004) Sprocket Hole Pitch P 0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P 1 2.00 ± 0.05 (0.079 ± 0.002) Overall Tape Thickness T 0.20 ± 0.10 (0.008 ± 0.004) Tape Width W 12.00 ± 0.20 (0.472 ± 0.008) Reel Width W 1 18.4 (0.724) MAX. Quantity per Reel -- 2500 REV. 12/12 Asia-Pacifi c: Tel: +886-2 2562-4117 Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555 Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500 Fax: +1-951 781-5700 www.bourns.com Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications. P A F E T 120 ° D D1 C Index Hole PART ORIENTATION W B 10 pitches (min.) Direction of Feed 10 pitches (min.) End Trailer Device Leader Start d PIN 1