CDDFN10-3304N BOURNS | Alldatasheet

Document overview

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Technical content

Features

■ Lead free as standard ■ RoHS compliant* ■ Low capacitance - 4 pF ■ ESD protection >24 kV ■ Surge protection

Applications

■ FireWire, T1/E1, T3/E3 chip side protection ■ Digital Visual Interface (DVI) ■ Ethernet 10/100/1000 Base T ■ High speed port protection ■ Portable electronics Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) CDDFN10-3304N - TVS/Steering Diode Array *RoHS COMPLIANT *RoHS Directive 2002/95/EC Jan 27 2003 including Annex. Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications Parameter Symbol CDDFN10-3304N Unit Peak Pulse Power (tp = 8/20 µs) (NOTE 1) PPK 400 W Storage Temperature T STG -55 to +150 ºC Operating Temperature T OPR -55 to +150 ºC Notes: 1. See Peak Pulse Power vs. Pulse Time. General Information Asia-Pacifi c: Tel: +886-2 2562-4117  Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555  Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500  Fax: +1-951 781-5700 www.bourns.com The CDDFN10-3304N device provides ESD, EFT and Surge protection for high speed data ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements. The Transient Voltage Suppressor array, protecting up to 4 data lines, offers a Working Peak Reverse Voltage of 3.3 V. The DFN-10 packaged device will mount directly onto the industry standard DFN-10 footprint. Bourns ® Chip Diodes are easy to handle with standard pick and place equipment and their fl at confi guration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CDDFN10-3304N Unit Minimum Snap-Back Voltage @ 50 mA V SB 3.3 V Maximum Working Peak Voltage V WM 3.3 V Maximum Leakage Current @ VWM ID 1µ A Maximum Clamping Voltage1 @ IP = 1 A V C 5.5 V Maximum Clamping Voltage1 @ IP = 10 A V C 10 V Minimum Punch-Through Voltage @ 5 A V P 3.5 V Maximum Junction Capacitance2 @ 0 V 1 MHz C D 4.0 pF ESD Protection per IEC 61000-4-2 Minimum Contact Discharge Minimum Air Discharge kV kV EFT Protection per IEC 61000-4-4 @ 5/50 ns 40 A Surge Protection per IEC 61000-4-5 @ 8/20 µs Level 2 (Line-Gnd) & Level 3 (Line-Line) 18 A Note 1: Pin 5 to ground. Note 2: Pin 1,3,7 or 9 to ground. Pin Pin Pin Pin Pin Pin

Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications CDDFN10-3304N - TVS/Steering Diode Array Product Dimensions Pin Out This is a molded DFN10 package with lead free Nickel-Paladium- Gold (Ni/Pd/Au) on the lead frame. It has a fl ammability rating of UL 94V-0. Recommended Footprint How to Order CD DFN10 - 33 04 N Common Diode Chip Diode Package DFN10 = DFN-10 Package Working Peak Reverse Voltage 33 = 3.3 V RWM (Volts) Number of Lines 04 = 4 Data Lines Suffi x N = Low Capacitance Typical Part Marking DIMENSIONS: MM (INCHES) Pin Function

1 I/O

2 N.C.

3 I/O

4 N.C. CC 6 N.C.

7 I/O

8 N.C.

9 I/O

10 N.C. GND GROUND 2.50 - 2.70 (0.098 - 0.106) PIN 1 INDICATOR 2.50 - 2.70 (0.098 - 0.106) 2.10 - 2.20 (0.083 - 0.087) 0.50 (.020) 0.45 - 0.55 (0.018 - 0.022) 0.13 (0.005) 1.21 - 1.31 (0.048 - 0.052) 0.35 - 0.45 (0.014 - 0.018) 0.25 - 45 ° 2.05 (.081) 1.26 (.050) 3.15 (.124) 1.85 (.073) 2.50 (.100) 0.50 (.020) 0.65 (.026) 0.30 (.012)

IPP – Peak Pulse Current (% of IPP) t – Time (µs) Test Waveform Parameters tt = 8 µs td = 20 µs tt et td = t|IPP/2 100 250 % of Rated Power TL - Lead Temperature (°C) 50 75 100 125 150 Peak Pulse Power 8/20 µs Average Power 100 1000 10,000 10.01 10,000 PPP – Peak Pulse (W) td – Pulse Duration (µs) 10 100 1,000

500 W, 8/20 µs Waveform

2.0 C – Capacitance (pF) VR – Reverse Voltage (V) 3.0 4.0 5.0 2 3 4 5 -250.00 ns -20 -10 0.000 ns 50.0 ns/div. real time ESD Test Pulse: 25 kilovolt, 1/30 ns (waveshape) 250.00 ns

5 Volts per Division

Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications CDDFN10-3304N - TVS/Steering Diode Array Rating & Characteristic Curves Peak Pulse Power vs. Pulse Time Pulse Waveform Overshoot & Clamping Voltage Power Derating Curve Typical Reverse Voltage vs. Capacitance

Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications CDDFN10-3304N - TVS/Steering Diode Array Packaging Information PA F E T 120 ° D D1 C Index Hole W B 10 pitches (min.) Direction of Feed 10 pitches (min.) End Trailer Device Leader Start d The product will be dispensed in tape and reel format (see diagram below). Devices are packed in accordance with EIA standard RS-481-A. DIMENSIONS: MM (INCHES) Item Symbol DFN-10 Carrier Width A 2.90 ± 0.10 (0.114 ± 0.004) Carrier Length B 2.90 ± 0.10 (0.114 ± 0.004) Carrier Depth C 0.90 ± 0.10 (0.035 ± 0.004) Sprocket Hole d 1.55 ± 0.05 (0.061 ± 0.002) Reel Outside Diameter D 178 (7.008) Reel Inner Diameter D 1 50.0 (1.969) MIN. Feed Hole Diameter D 2 13.0 ± 0.20 (0.512 ± 0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 3.50 ± 0.05 (0.138 ± 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 ± 0.004) Sprocket Hole Pitch P 0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P 1 2.00 ± 0.05 (0.079 ± 0.002) Overall Tape Thickness T 0.20 ± 0.10 (0.008 ± 0.004) Tape Width W 8.00 ± 0.20 (0.315 ± 0.008) Reel Width W 1 14.4 (0.567) MAX. Quantity per Reel -- 3000