CDC7630-000 ALPHA | Alldatasheet

Document overview

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Technical content

Features

I For Detector and Mixer Applications I Low Capacitance for Usage Beyond 40 GHz I ZBD and Low Barrier Designs I P-Type and N-Type Junctions I Large Bond Pad Chip Design

Description

Alpha’s product line of silicon Schottky diode chips are intended for use as detector and mixer devices in hybrid integrated circuits at frequencies from below 100 MHz to higher than 40 GHz. Alpha’s “Universal Chip” design features a 4 mil diameter bond pad that is offset from the semiconductor junction preventing damage to the active junction as a result of wire bonding. As power-sensing detectors, these Schottky diode chips all have the same voltage sensitivity so long as the output video impedance is much higher than the video resistance of the diode. Figure 1 shows the expected detected voltage sensitivity as a function of RF source impedance in an untuned circuit. Note that sensitivity is substantially increased by transforming the source impedance from 50 Ω to higher values. Maximum sensitivity occurs when the source impedance equals the video resistance. Electrical Specifications at 25°C Junction CJ1 RT2 VF @ 1 mA V B3 RV @ Zero Bias OutlinePart Number Barrier Type (pF) ( ΩΩ) (mV) (V) (k ΩΩ) CDC7630-000 ZBD P 0.25 30 135–240 1 5.5 526-006 CDC7631-000 ZBD P 0.15 80 150–300 2 7.2 526-006 CDB7619-000 Low P 0.10 40 275–375 2 735 526-006 CDB7620-000 Low P 0.15 30 250–350 2 537 526-006 CDF7621-000 Low N 0.10 20 270–350 2 680 526-011 CDF7623-000 Low N 0.30 10 240–300 2 245 526-011 1. CJ for low barrier diodes specified at 0 V. CJ for ZBDs specified at 0.15 V reverse bias. 2. RT is the slope resistance at 10 mA. RS Max. may be calculated from: RS = RT - 2.6 x N. 3. VB for low barrier diodes is specified at 10 µA. VB for ZBDs is specified at 100 µA. In a detector circuit operating at zero bias, depending on the video load impedance, a ZBD device with RV less than 10 kΩ may be more sensitive than a low barrier diode with RV greater than 100 kΩ. Applying forward bias reduces the diode video resistance as shown in Figure 2. Lower video resistance also increases the video bandwidth but does not increase voltage sensitivity, as shown in Figure 3. Biased Schottky diodes have better temperature compensated detector circuits.

Silicon Schottky Diode Chips Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com 3 Specifications subject to change without notice. 8/01A Characteristic Value Reverse Voltage (VR) Voltage Rating Forward Current (IF) 50 mA Power Dissipation (PD) 75 mW Storage Temperature (TST) -65 °C to +150°C Operating Temperature (TOP) -65 °C to +150°C Absolute Maximum Ratings 0.015 (0.38 mm) 0.013 (0.33 mm) 0.015 (0.38 mm) 0.013 (0.33 mm) BONDING PAD DIAMETER 0.0035 (0.089 mm)– 0.0045 (0.114 mm) 0.0085 (0.216 mm) 0.0065 (0.165 mm) 526-006 = Cathode bond pad. 526-011 = Anode bond pad. Outline Drawing 526-006, 526-011