CDBV220-G COMCHIP | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Low Forward Voltage Drop. - Very Small SMD Package. Mechanical Data - Case: SOD-323, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. - Polarity: Indicated by cathode end. Dimensions in inches and (millimeter) 0.071 (1.80) 0.063 (1.60) 0.055 (1.40) 0.047 (1.20) 0.108 (2.75) 0.100 (2.55) 0.039 (1.00) MAX. 0.014 (0.35) 0.010 (0.25) 0.019 (0.475)REF 0.006 (0.15) 0.004 (0.10) SMD Schottky Barrier Diodes 0.003 (0.08) Circuit Diagram Parameter Unit Maximum Ratings (At Ta=25°C, unless otherwise noted) Peak repetitive reverse voltage Working peak reverse voltage RMS reverse voltage Continuous forward current Non-repetitive peak forward surge current @ t=8.3ms Power dissipation Thermal resistance from junction to ambient Junction temperature range Symbol VRRM VRWM VR(RMS) IF IFSM PD RθJA TJ 250 480 400 -40 ~ +125 V V A A mW °C/W Unit Electrical Characteristics (At Ta=25°C, unless otherwise noted) Reverse breakdown voltage Reverse current Forward voltage (Note 1) Total capacitance 20 V μA pF Conditions VR = 4V, f = 1MHz V(BR) IR VF Ctot 100 120 IR = 1mA VR = 10V VR = 20V IF = 1A Storage temperature range TSTG -55 ~ +150 °C V 0.45 0.55IF = 2A SOD-323 0.000 (0.00) CDBV220-G 208 (Note 1) (Note 2) (Note 1) (Note 2) Note: (1) Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Note: (1) 300 ≤ Pulse test: tp ≤ μs ; δ 0.02 Parameter Max.Symbol Min. (2) Device mounted on an FR4 PCB with copper pad 10 x 10 mm. QW-BB050 Page 1 REV: A Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice.

RATING AND CHARACTERISTIC CURVES (CDBV220-G) Fig.1 - Power Derating Curve Power Dissipation, PD (mW) 0 75 Capacitance Between Terminals, CT (pF) Reverse Voltage, VR (V) 50 100 125 200 300 100 SMD Schottky Barrier Diodes 250 150 100 300 0 205 200 150 TA=25°C f=1MHz Ambient Temperature, Ta (°C) Fig.2 - Capacitance Characteristics QW-BB050 Page 2 REV: A Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. Fig.3 - Forward Characteristics 0.01 Forward Current, IF (A) 0.1 Fig.4 - Reverse Characteristics Reverse Current, IR (mA) Reverse Voltage, VR (V) 0 600200 400 0.001 0 305 0.01 0.1 Forward Voltage, VF (mV) 250 20 2515 TA = 100°C TA = 25°C 100 300 500 TA = 25°C TA = 100°C

SMD Schottky Barrier Diodes QW-BB050 Page 3 REV: A Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. B C d D D2D1 SOD-323 SYMBOL (mm) (inch) 2.142 ± 0.039 4.00 ± 0.10 178 ± 2.00 SYMBOL (mm) E F P P0 P1 W W1 1.75 ± 0.10 0.069 ± 0.004 3.50 ± 0.10 0.138 ± 0.004 SOD-323 1.48 ± 0.05 0.058 ± 0.002 3.30 ± 0.05 0.130 ± 0.002 1.25 ± 0.05 0.049 ± 0.002 12.30 ± 1.00 0.484 ± 0.039 8.00 0.30 /+ –0.10 Reel Taping Specification o 120 D1 D2 D A

SMD Schottky Barrier Diodes QW-BB050 Page 4 REV: A Comchip Technology CO., LTD. Company reserves the right to improve product design , functions and reliability without notice. SH Part Number Marking Code CDBV220-G Marking Code SOD-323 XX XX = Product type marking code Standard Packaging Case Type 3,000 REEL ( pcs ) Reel Size (inch) REEL PACK ▎= The marking bar indicates the cathode. SIZE (inch) 0.085 (mm) 2.15 0.70 0.70 0.028 0.028 B C A SOD-323 A B C Suggested PAD Layout 1.General tolerance: ±0.05mm. 2.The pad layout is for reference purposes only. Note: