CDBV0140-G COMCHIP | Alldatasheet
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Technical content
Features
-High current rectifier Schottky diode. -Low voltage, low inductance. -For power supply. Case: SOD-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Marking: 4 Page 1QW-BA014 RoHS Device REV:A Parameter Symbol Limits Unit Parameter Conditions Symbol Min Typ Max Unit SOD-323 Dimensions in inches and (millimeters) 0.106 (2.70) 0.098 (2.50) 0.055 (1.40) 0.047 (1.20) 0.071 (1.80) 0.063 (1.60) 0.039 (1.00)max 0.014 (0.35) 0.010 (0.25) 0.019 (0.475)REF. 0.006 (0.15) 0.004 (0.10)max 0.003 (0.08) Peak reverse voltage DC reverse voltage Average rectified current Peak forward surge current Junction temperature range Storage temperature range V V I I T T RM R O FSM J STG 0.1 -55 ~ +125 -55 ~ +125 V V A A CO O C Forward voltage Reverse current Capacitance between terminals I =100mA I =10mA V =10V V =10V, f=1MHz F F R R V I C F R T 6 0.55 0.34 V μA pF SMD Schottky Barrier Diode IO=0.1A VR=30V Maximum Ratings (at Ta=25°C unless otherwise noted) Electrical Characteristics (at Ta=25°C unless otherwise noted)
ELECTRICAL CHARACTERISTIC CURVES (CDBV0140-G) Page 2QW-BA014 REV:A Fig.2 Reverse Characteristics 0 .1μ V , Reverse Voltage (V)R Fig.1 Forward Characteristics V , Forward Voltage (V)F Fig.3 Capacitance Between Terminals Characteristics V , Reverse Voltage (V)R 1 00 0.6 40 0 5 1 0 1 5 20 100 1 000 2 5 30 35 Fig.4 Forward Derating Curve T , Ambient Temperature ( C)A O 0 2 4 5 0 7 5 10 0 125 100 1 0 30 10μ 100 μ 10m 1 50 125 CO 75 CO 25 CO SMD Schottky Barrier Diode