CDBU0530 COMCHIP | Alldatasheet
Document overview
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Technical content
Features
Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.003 gram(approx.). O Maximum Rating (at TA=25 C unless otherwise noted) O Electrical Characteristics (at TA=25 C unless otherwise noted) Page 1 Typ IO VR VRM Average forward rectified current Reverse voltage Peak reverse voltage Forward current,surge peak SymbolParameter Conditions Min Max Unit V V A0.5 Tj Storage temperature Junction temperature O C+125 -40 IFSM 8.3 ms single half sine-wave superimposed on rate load (JEDEC method) 2 A REV:A 0.071(1.80) 0.063(1.60) 0.014(0.35) Typ. 0.039(1.00) 0.031(0.80) 0.033(0.85) 0.027(0.70) Dimensions in inches and (millimeter) 0603(1608) 0.012 (0.30) Typ. 0.028(0.70) Typ. SMD Diodes Specialist
Capacitance between terminals (PF) Reverse voltage (V) RATING AND CHARACTERISTIC CURVES (CDBU0530) SMD Schottky Barrier Diode Page 2 Forward current (mA ) 0.2 0.40 100 0.5 0.7 Forward voltage (V) Fig. 1 - Forward characteristics O -25 CO CO CO 125 C Reverse current ( A ) Reverse voltage (V) 100u 0.1u 100m 10u 0 5 10 15 20 Fig. 2 - Reverse characteristics O -25 C 0 5 10 15 20 f=1MHzO Ta=25 C 100 0 25 50 75 100 125 150 O Ambient temperature ( C) Average forward current(%) Fig.4 - Current derating curve 120 1000 QW-A1102 Fig. 3 - Capacitance between terminals characteristics 0.1 0.3 0.6 10m O 100 C O 75 C O 25 C REV:A SMD Diodes Specialist