CDBM120 COMCHIP | Alldatasheet

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Features

Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Exceeds environmental standard MIL-S- Low leakage current Mechanical data Case: Mini SMA/SOD-123 molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.04 gram 0.071( 1.80) 0.055( 1.40) 0.110(2. 80) 0.094( 2.40) 0.063( 1.60) 0.055( 1.40) MINI SMA Dimensions in inches and (millimeter) 0.161( 4.10) Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS V oltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 Ta=100 Max. Thermal Resistance (Note 1) Operating Junction T emperature Storage T emperature Symbol VRRM VDC VRMS IFSM I o V F I R R JA R JL T j TSTG Unit V V V A A V mA CDBM120 CDBM1100CDBM180CDBM160CDBM140 100 100 1.0 0.50 0.850.70 -55 to +125 0.5 -55 to +150 5 10 -55 to +150 /WC C C C C

Rating and Characteristic Curves (CDBM120 Thru CDBM1100) Fig. 1 - Rev erse Ch aract eristi cs Percent of Rated Peak Reverse V oltage (%) Reverse Current ( mA ) Fig. 4 - Curren t Derating Curve 0.6 1.2 16020 40 60 80 100 120 140 Average forward current ( A ) www.com chip.co m.tw COMCHIPCOMCHIP 0 20 40 60 80 100 120 140 160 180 200 Forward Current ( A ) Forw ard Vol tage ( V) Fig.2 - Fo rward C harac terist ics 0.01 0.1 1.0 10 100 MDS0208014B Page 2 Fig. 3 - Junc tion Cap acita nce Reverse Voltage (V) Junction Capacitance (pF) 100 150 350 SMD Schottky Barrier RectifierSMD Schottky Barrier Rectifier 0.2 0.4 1.0 0.8 300 250 200 Peak surge Forward Current ( A ) Fig. 5 - Non re petiti ve Forw ard Surge Cur rent 1 5 10 50 1 00 Number of Cycles at 60Hz 100 0.1 0.0 1 100 0.1 0.0 1 Tj=75 C Tj=25 C CDBM180-1100 CDBM120-140 CDBM160 CDBM120-140 CDBM160-1100 Ambient T emperature ( C) Tj=25 C 8.3mS Single Half Sine Wave JEDEC methode =1MHz and applied 4VDC reverse voltage