CDBG820-G COMCHIP | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Max. Forward rectified current (See Fig.1) VR = VRRM TA = 25oC VR = VRRM TA = 100oC Max. Forward surge current Max. Reverse current Diode junction capacitance Max. Storage temperature Operating temperature -55 to +125 Thermal resistance Junction Ambient f=1MHz and applied 4vDC reverse Voltage mA pF IO IR IFSM VRRM VRMS VR VF RJA 8.3ms single half sine-wave superimposed on rate load (JEDEC method) 8.0 20 30 40 14 21 28 0.55 0.70 30 40 150 1.0 700 +150 A Repetitive Peak Reverse Voltage Marking Code RMS voltage Continuous reverse voltage Maximum forward voltage V V V V A oC/ W oC oC www.comchiptech.com UnitCDBG820-G CDBG830-G CDBG840-G 50 60 35 42 50 60 CDBG850-G CDBG860-G SS82 SS83 SS84 SS85 SS86 Symbol TSTG Cj Case: Molded plastic, G package (6.9mmx4.5mm) Terminals: Solder plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band Mounting position: Any Approx. Weight: 0.00585 ounce, 0.195 gram Mechanical Data: Maximum Ratings (at TA = 25oC unless otherwise noted) Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds enviromental standards of MIL-S-19500/228 Low leakage current Features: Reverse Voltage: 20 ~ 60 Volts Forward Current: 8 A CDBG820-G THRU CDBG860-G (RoHS Device) SMD Schottky Barrier Diode 0.283(7.2) 0.189(4.8) 0.244(6.2) 0.228(5.8) Dimensions in inches and (millimeters) G package 0.152(3.8) 0.144(3.6) 0.032(0.8) Typ. 0.165(4.2) 0.098(2.5) 0.075(1.9)
0.1 1.0 .01 RATING AND CHARACTERISTIC CURVES (CDBG820-G THRU CDBG860-G) FIG.1-TYPICAL FORWARD CURRENT DERA TING CURVE AVERAGE FORWARD CURRENT,(A) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.4-TYPICAL JUNCTION CAPACIT ANCE REVERSE VOLTAGE,(V) JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) FORWARD VOLT AGE,(V) Pulse Width 300us 1% Duty Cycle 2000 2400 2800 1600 1200 800 400 .01 .05 .1 .5 1 5 10 50 100 1.0 100 FIG.5 - TYPICAL REVERSE CHARACTERISTICS REVERSE LEAKAGE CURRENT, (mA) 0 20 40 60 80 100 120 140 .01 Tj=75 C Tj=25 C Tj=25 C 100 150 250 200 NUMBER OF CYCLES AT 60Hz 11 0 5 50 100 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method PERCENT OF RATED PEAK REVERSE VOL TAGE,(%) 0 20 40 60 80 100 120 140 160 180 200 CASE TEMPERATURE,( C) FIG.2-TYPICAL FORWARD CHARACTERISTICS PEAK FORWARD SURGE CURRENT,(A)PEAK FORWARD SURGE CURRENT,(A) SMD Schottky Barrier Diode