CD909 CDIL | Alldatasheet

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Continental Device India Limited Data Sheet Page 1 of 3 CD909 NPN PLASTIC POWER TRANSISTOR Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) V CBO max. 100 V Collector-emitter voltage (open base) V CEO max. 90 V Collector current I C max. 12.0 A Total power dissipation up to TC = 25°C P tot max. 75 W Junction temperature T j max. 150 °C Collector-emitter saturation voltage IC = 4 A; I B = 0.5 A V CEsat max. 1.0 V D.C. current gain IC = 1 A; V CE = 4 V h FE min 80 max. 400 RATINGS (at T A=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) V CBO max. 100 V Collector-emitter voltage (open base) V CEO max. 90 V Emitter-base voltage (open collector) V EBO max. 6.0 V Collector current I C max. 12.0 A CD909 PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR B 1 23 J MG D H A OO K N L F E C DIM MIN. MAX. All diminsions in mm. A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0 . 9 0 E 1.15 1.40 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J0 . 5 6 K 12.70 14.73 L 2.80 4.07 M 2.03 2.92 N 31.24 OD E G 7 2 3 TO-220 Plastic Package Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company

Continental Device India Limited Data Sheet Page 2 of 3 Total power dissipation up to TC = 25°C P tot max. 75 W Junction temperature T j max. 150 ºC Storage temperature T stg –65 to +150 ºC CHARACTERISTICS T amb = 25°C unless otherwise specified Collector cutoff current IE = 0; V CB = 100 V I CBO max. 100 µA Emitter cut-off current IC = 0; V EB = 5V I EBO max. 1000 µA Breakdown voltages IC = 1 mA; I B = 0 V CEO min. 90 V IC = 1 mA; I E = 0 V CBO min. 100 V IE = 1 mA; I C = 0 V EBO min. 6.0 V Saturation voltages IC = 4 A; I B = 0.5 A V CEsat max. 1.0 V VBEsat max. 1.5 V Base emitter on voltage IC = 4A; V CE = 4V V BE(on) max. 1.5 V D.C. current gain IC = 1 A; V CE = 4 V h FE min. 80 max. 400 I C = 10 A; V CE = 4 V h FE min. 5 Transition frequency IC = 0.3 A; V CE = 3 V f T min. 3 MHz Output capacitance IE = 0; V CB = 10V C o typ. 100 pF Second breakdown collector current with base forward biased (non-repetitive) VCE = 21.5 V; t = 50ms I S/b typ. 3.5 A CD909

Continental Device India Limited Data Sheet Page 3 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com