15KCD68 MICROSEMI | Alldatasheet

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1.5KCD6.8 thru . . 1.5KCD200A, Microsemi Corp. cpsses and CD6267 f trace creme thru CD6303A Pome leon Ferme nrmaon Transient Suppressor Gave / (san) 3.4300 CELLULAR DIE PACKAGE APPLICATION This TAZ* series has a peak pulse power rating of 1500 watts for one millisecond. It can protect integrated circuits, hybrids, CMOS, MOS and other voltage sensitive components that are used in a broad range PACKAGE of applications including: telecommunications, power supplies, DIMENSIONS computers, automotive, industrial and medical equipment. TAZ* devices have become very important as a consequence of their high surge capability, extremely fast response time and low clamping voltage. The cellular die (CD) package is ideal for use in hybrid applications and for solder mounting. The cellular design in hybrids assures ample bonding with immediate heat sinking to provide the required transient — peak pulse power of 1500 watts.

FEATURES

@ Economical T » 1500 Watts peak pulse power dissipation 126 Diam. fo) @ Stand-Off voltages from 5.0V to 171V aT nso) @ Uses thermally passivated die design ~ <@ ® Additional silicone protective coating over die for rugged 38 @ environments =O} ® Stringent process norm screening oe O @ Low leakage current at rated stand-off voltage fe 8. Olam. & Exposed metal surfaces are readily solderable . % 100% lot traceability Mem Nomber__Deseription & Manufactured in the U.S.A. ! Niel nd Sir Ped Copper Dis @ Meets JEDEC IN6267 - IN6303A electrically equivalent 3 Silicon Die specifications errno iia ® Available in bipolar configuration @ Additional transient suppressor ratings and sizes are available as well as zener, rectifier and reference diode configurations. Consult factory for special requirements. MECHANICAL CHARACTERISTICS MAXIMUM RATINGS

1500 Watts of Peak Pulse Power Dissipation at 25°C** Case: Nickel and Silver plated copper

clamping (0 Volts to BV Min.): discs with conformal coating. unidirectional <1x10-? seconds; Finish: Both external surfaces are bidirectional <5x10° seconds; corrosion resistant, readily Operating and Storage Temperature: -65°C to +175°C solderable. Forward Surge Rating: 200 Amps, 1/120 second at 25°C Polarity: i Steady State Power Dissipation is heat sink dependent. olarity: Large contact side is cathode Mounting Position: Any “Transient Absorption Zener ‘**Wire contactor tab geometry for interconnects should be seleced with odequate cross-sectional size 10 prevent fusing relative to peak pulse current rating (pp). a5

1.5KCD6.8 thru 1.5KCD200A, 2 SS SS Se CD5908 and CD6267 thru CD6303A . SE See aad CELLULAR DIE PACKAGE i pases Seeeenmeetieraest ELECTRICAL CHARACTERISTICS @ 25°C | 3 7S Sem= Se 2 ip ae See eet = ele] [25 ORGS SSS Se xe oo cake ih BOERS Secu ‘8 a. we at SSH even [Soe [wom foe | ee [Sie] | Bee TIS iim wen lax | ae lastasl: |e] og] a | & 8 SSS ENE VEG. | fea | sa [ump ke) | a Po) ds Ea 2 eee esa vem (cee | ge laclesl:] 2 | cla] = 2 EH ia HEE. | gee | 38) BE) RS] i | Be BY 8s Es 8 (COMP TP von [oe foe fezlze]if ge | pda |g 8° SPSS Ree Btsty os | Be |ie| Rel} 3 : Et Ss ° Lt Hey bk i HR | GER | BB BBY RR] i] se b) Bs a a wil tt {if tiscom | come go lasluel | om + 3 Pe FIGURE 2 Bet | SE | ge He) 8] i | ae ne ES Typical Capacitance vs Breakdown Voltage eek. | fe | BR LTE] RE] E | te i) 2 ES vs {ee | Ge | eS sel ie]: we Hi a io ® Seat a Ld Et i Ey we ! vena tt TEER | GMA | ER REE) E Be i a S = Fy dos. | umn | Re EES] i] me] of | a 8 / | pr ere-0s M I ctl Lit MR ac i # & 8. | | Vf at 100 amps peak. 8.3 ms sine wave equals 3.5 volts maximum. For Fd “eee | bidirectional part number add C or CA as suffix (ie: 1.5KCD33C or . | 1,SKCD33CA; or CD6283C or CD6283CA). = PN Note that for bidirectional types having Vyyy4 of 8 volts and under, the Ip 7 | leakage current is doubled. a r SYMBOLS AND ABBREVIATIONS “ | —T A . rs iti in me Vwa = RATED STAND-OFF VOLTAGE FIGURE 3 use Wave Form Ipp = PEAK PULSE CURRENT — = ‘See Figure 1 For Peak Puloa vi] Ve quay) ~ MAXIMUM CLAMPING VOLTAGE é Lec laatin) Vigpy = BREAKDOWN VOLTAGE 22> _\\ 1, = TEST CURRENT 3 2 | | ae 1 N Ip = REVERSE LEAKAGE & | BS a a NOTE 1 Normal selection criteria for TAZ* devices is by rated stand-off voltage (Vyyy4) and ae should be equal or greater than DC or continuous peak operating voltage. ge, NOTE2TAZ® devices are tested to maximum peak pulse current (Ip) with clamping voltage Pa Temperature in °C as monitored. This surge eapability s one of the most significant electrical characteristics Fi FIGURE 4 ‘of the device and should be considered as part of customer quality inspections. eo Derating Curve