CD4503BMS INTERSIL | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 8

Technical content

Features

  • High Voltage Type (20V Rating)
  • 3 State Non-Inverting Type
  • 1 TTL Load Output Drive Capability
  • 2 Output Disable Controls
  • 3 State Outputs
  • Pin Compatible with Industry Types MM80C97, MC14503, and 340097
  • 5V, 10V and 15V Parametric Ratings
  • Maximum Input Current of 1µA at 18V Over Full Pack- age Temperature Range; 100nA at 18V and +25 oC
  • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices”

Applications

  • 3 State Hex Buffer for Interfacing ICs with Data Buses
  • COS/MOS to TTL Hex Buffer Pinout CD4503BMS TOP VIEW Functional Diagram Braze Seal DIP H4T Frit Seal DIP H1E Ceramic Flatpack H6W DIS A VSS VDD DQ6 DIS B Q13 VDD = 16 VSS = 8 DISABLE A D1 2 Q25D2 4 Q37D3 6 Q49D4 10 Q511D5 12 Q613D6 14 15DISABLE B December 1992 File Number 3335 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. Go/No Go test with limits applied to inputs.
  2. For accuracy, voltage is measured differentially to VDD. Limit is

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

  1. All voltages referenced to device GND.
  2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial

design release and upon design changes which would affect these characteristics. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS NOTES: 1. All voltages referenced to device GND.

  1. See Table 2 for +25oC limit.

TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25 oC TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

TABLE 6. APPLICABLE SUBGROUPS NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS

  1. Each pin except VDD and GND will have a series resistor of 10K± 5%, VDD = 18V± 0.5V
  2. Each pin except VDD and GND will have a series resistor of 47K± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitewww.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 CD4503BMS