CD4002M NSC | Alldatasheet

Document overview

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Technical content

Features

Y Wide supply voltage range 3.0V to 15V Y Low power 10 nW (typ.) Y High noise immunity 0.45 V DD (typ.)

Applications

Y Automotive Y Alarm system Y Data terminals Y Industrial controls Y Instrumentation Y Remote metering Y Medical Electronics Y Computers Connection Diagrams CD4002 Dual-In-Line Package TL/F/5940–1 Top View CD4012 Dual-In-Line Package TL/F/5940–2 Top View Order Number CD4002 or CD4012 C1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Voltage at Any Pin V SS b0.3V to V DD a0.3V Operating Temperature Range CD4002M, CD4012M b55§Ct o a125§C CD4002C, CD4012C b40§Ct o a85§C Storage Temperature Range (T S) b65§Ct o a150§C Power Dissipation (P D) Dual-In-Line 700 mW Small Outline 500 mW Operating Range (V DD)V SS a3.0V to V SS a15V Lead Temperature (T L) (Soldering, 10 seconds) 260 §C Limits Symbol Parameter Conditions b55§C a25§C a125§C Units Min Max Min Typ Max Min Max Device Current V DD e 10V 0.1 0.001 0.1 6 mA PD Quiescent Device V DD e 5.0V 0.25 0.005 0.25 15 mW Dissipation/Package V DD e 10V 1.0 0.01 1.0 60 mW VOL Output Voltage V DD e 5.0V, V I e VDD,I O e 0A 0.05 0 0.05 0.05 V Low Level V DD e 10V, V I e VDD,I O e 0A 0.05 0 0.05 0.05 V High Level V DD e 10V, V I e VSS,I O e 0A 9.95 9.95 10 9.95 V (Note 2) (Note 2) (Note 2) (Note 2) II Input Current 10 pA Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: I DN and I DP are tested one output at a time.

Symbol Parameter Conditions b55§C a25§C a85§C Units Min Max Min Typ Max Min Max IDD Quiescent V DD e 5.0V 0.5 0.005 0.5 15 mA Device Current V DD e 10V 5.0 0.005 5.0 30 mA PD Quiescent Device V DD e 5.0V 2.5 0.025 2.5 75 mW Dissipation/Package V DD e 10V 50 0.05 50 300 mW VOL Output Voltage V DD e 5.0V, V I e VDD,I O e 0A 0.05 0 0.05 0.05 V Low Level V DD e 10V, V I e VDD,I O e 0A 0.05 0 0.05 0.05 V High Level V DD e 10V, V I e VSS,I O e 0A 9.95 9.95 10 9.95 V (Note 2) (Note 2) (Note 2) (Note 2) II Input Current 10 pA Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: I DN and I DP are tested one output at a time.

temperature coefficient for all values of V DD e 0.3%/§C. Symbol Parameter Conditions Min Typ Max Units CD4002M tPHL Propagation Delay Time V DD e 5.0V 35 50 ns High to Low Level V DD e 10V 25 40 ns tPLH Propagation Delay Time V DD e 5.0V 35 50 ns Low to High Level V DD e 10V 25 40 ns tTHL Transition Time High V DD e 5.0V 65 175 ns to Low Level V DD e 10V 35 75 ns tTLH Transition Time Low V DD e 5.0V 65 125 ns to High Level V DD e 10V 35 70 ns CIN Input Capacitance Any Input 5.0 pF CD4002C tPHL Propagation Delay Time V DD e 5.0V 35 120 ns High to Low Level V DD e 10V 25 65 ns TPLH Propagation Delay Time V DD e 5.0V 35 80 ns Low to High Level V DD e 10V 25 55 ns tTHL Transition Time High V DD e 5.0V 65 300 ns to Low Level V DD e 10V 35 125 ns tTLH Transition Time Low V DD e 5.0V 65 200 ns to High Level V DD e 10V 35 115 ns CIN Input Capacitance Any Input 5.0 pF *AC Parameters are guaranteed by DC correlated testing. temperature coefficient for all values of V DD e 0.3%/§C. Symbol Parameter Conditions Min Typ Max Units CD4012M tPHL Propagation Delay Time V DD e 5.0V 50 75 ns High to Low Level V DD e 10V 25 40 ns tPLH Propagation Delay Time V DD e 5.0V 50 75 ns Low to High Level V DD e 10V 25 40 ns tTHL Transition Time High V DD e 5.0V 75 125 ns to Low Level V DD e 10V 50 75 ns tTLH Transition Time Low V DD e 5.0V 75 100 ns to High Level V DD e 10V 40 60 ns CIN Input Capacitance Any Input 5.0 pF CD4012C tPHL Propagation Delay Time V DD e 5.0V 50 100 ns High to Low Level V DD e 10V 25 50 ns TPLH Propagation Delay Time V DD e 5.0V 50 100 ns Low to High Level V DD e 10V 25 50 ns tTHL Transition Time High V DD e 5.0V 75 150 ns to Low Level V DD e 10V 50 100 ns tTLH Transition Time Low V DD e 5.0V 75 125 ns to High Level V DD e 10V 40 75 ns CIN Input Capacitance Any Input 5.0 pF *AC Parameters are guaranteed by DC correlated testing. Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation.

Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number CD4002MJ, CD4002CJ, CD4012MJ or CD4012CJ

CD4002M/CD4002C Dual 4-Input NOR Gate CD4012M/CD4012C Dual 4-Input NAND Gate Physical Dimensions inches (millimeters) (Continued) Molded Dual-In-Line Package (N) Order Number CD4002MN, CD4002CN, CD4012MN or CD4012CN LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.

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