CD4001BC

CD4011BC NSC | Alldatasheet

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Y Low power TTL Fan out of 2 driving 74L compatibility or 1 driving 74LS Y 5V–10V–15V parametric ratings Y Symmetrical output characteristics Y Maximum input leakage 1 mA at 15V over full tempera- ture range Schematic Diagrams TL/F/5939–1 CD4001BC/BM TL/F/5939–2 (/4 of device shown J e A a B Logical ‘‘1’’ e High Logical ‘‘0’’ e Low *All inputs protected by standard CMOS protection circuit. TL/F/5939–5 CD4011BC/BM TL/F/5939–6 (/4 of device shown J e A # B Logical ‘‘1’’ e High Logical ‘‘0’’ e Low *All inputs protected by standard CMOS protection circuit. C1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

Absolute Maximum Ratings (Notes 1 and 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Voltage at any Pin b0.5V to V DD a0.5V Power Dissipation (P D) Dual-In-Line 700 mW Small Outline 500 mW V DD Range b0.5 V DC to a18 V DC Storage Temperature (T S) b65§Ct o a150§C Lead Temperature (T L) (Soldering, 10 seconds) 260 §C Operating Conditions Operating Range (V DD)3 V DC to 15 V DC Operating Temperature Range CD4001BM, CD4011BM b55§Ct o a125§C CD4001BC, CD4011BC b40§Ct o a85§C Symbol Parameter Conditions b55§C a25§C a125§C Units Min Max Min Typ Max Min Max IDD Quiescent Device V DD e 5V, V IN e VDD or V SS 0.25 0.004 0.25 7.5 mA Current V DD e 10V, V IN e VDD or V SS 0.50 0.005 0.50 15 mA VDD e 15V, V IN e VDD or V SS 1.0 0.006 1.0 30 mA VOL Low Level V DD e 5V 0.05 0 0.05 0.05 V Output Voltage V DD e 10V lIOl k 1 mA 0.05 0 0.05 0.05 V VDD e 15V ( 0.05 0 0.05 0.05 V VOH High Level V DD e 5V 4.95 4.95 5 4.95 V Output Voltage V DD e 10V lIOl k 1 mA 9.95 9.95 10 9.95 V VDD e 15V ( 14.95 14.95 15 14.95 V VIL Low Level V DD e 5V, V O e 4.5V 1.5 2 1.5 1.5 V Input Voltage V DD e 10V, V O e 9.0V 3.0 4 3.0 3.0 V VDD e 15V, V O e 13.5V 4.0 6 4.0 4.0 V VIH High Level V DD e 5V, V O e 0.5V 3.5 3.5 3 3.5 V Input Voltage V DD e 10V, V O e 1.0V 7.0 7.0 6 7.0 V VDD e 15V, V O e 1.5V 11.0 11.0 9 11.0 V IIN Input Current V DD e 15V, V IN e 0V b0.10 b10b5 b0.10 b1.0 mA VDD e 15V, V IN e 15V 0.10 10 b5 0.10 1.0 mA Connection Diagrams CD4001BC/CD4001BM Dual-In-Line Package TL/F/5939–3 Top View CD4011BC/CD4011BM Dual-In-Line Package TL/F/5939–4 Top View Order Number CD4001B or CD4011B

Symbol Parameter Conditions b40§C a25§C a85§C Units Min Max Min Typ Max Min Max IDD Quiescent Device V DD e 5V, V IN e VDD or V SS 1 0.004 1 7.5 mA Current V DD e 10V, V IN e VDD or V SS 2 0.005 2 15 mA VDD e 15V, V IN e VDD or V SS 4 0.006 4 30 mA VOL Low Level V DD e 5V 0.05 0 0.05 0.05 V Output Voltage V DD e 10V lIOl k 1 mA 0.05 0 0.05 0.05 V VDD e 15V ( 0.05 0 0.05 0.05 V VOH High Level V DD e 5V 4.95 4.95 5 4.95 V Output Voltage V DD e 10V lIOl k 1 mA 9.95 9.95 10 9.95 V VDD e 15V ( 14.95 14.95 15 14.95 V VIL Low Level V DD e 5V, V O e 4.5V 1.5 2 1.5 1.5 V Input Voltage V DD e 10V, V O e 9.0V 3.0 4 3.0 3.0 V VDD e 15V, V O e 13.5V 4.0 6 4.0 4.0 V VIH High Level V DD e 5V, V O e 0.5V 3.5 3.5 3 3.5 V Input Voltage V DD e 10V, V O e 1.0V 7.0 7.0 6 7.0 V VDD e 15V, V O e 1.5V 11.0 11.0 9 11.0 V IIN Input Current V DD e 15V, V IN e 0V b0.30 b10b5 b0.30 b1.0 mA VDD e 15V, V IN e 15V 0.30 10 b5 0.30 1.0 mA TA e 25§C, Input t r;t f e 20 ns. C L e 50 pF, R L e 200k. Typical temperature coefficient is 0.3%/ §C. Symbol Parameter Conditions Typ Max Units tPHL Propagation Delay Time, V DD e 5V 120 250 ns High-to-Low Level V DD e 10V 50 100 ns VDD e 15V 35 70 ns tPLH Propagation Delay Time, V DD e 5V 110 250 ns Low-to-High Level V DD e 10V 50 100 ns VDD e 15V 35 70 ns tTHL,t TLH Transition Time V DD e 5V 90 200 ns VDD e 10V 50 100 ns VDD e 15V 40 80 ns CIN Average Input Capacitance Any Input 5 7.5 pF CPD Power Dissipation Capacity Any Gate 14 pF *AC Parameters are guaranteed by DC correlated testing. Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: All voltages measured with respect to V SS unless otherwise specified. Note 3: IOL and I OH are tested one output at a time.

CD4001BM/CD4001BC Quad 2-Input NOR Buffered B Series Gate CD4011BM/CD4011BC Quad 2-Input NAND Buffered B Series Gate Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number CD4001BMJ, CD4001BCJ, CD40011BMJ or CD4011BCJ Molded Dual-In-Line Package (N) Order Number CD4001BMN, CD4001BCN, CD4011BMN or CD4011BCN LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.

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