CD214A-B140LR

CD214A-B1XR BOURNS | Alldatasheet

Document overview

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Technical content

Features

n RoHS compliant* n Low profile n Low power loss, high efficiency n UL 94V-0 classification

Applications

n Switch Mode Power Supplies n Portable equipment batteries n High frequency rectification n DC/DC Converters n Telecommunications CD214A-B1xR Series Schottky Barrier Rectifier Chip Diode *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. General Information Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in a compact chip package compatible with DO-214AC (SMA) size format. The Schottky Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V. Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CD214A- UnitB120R B120LR B140R B140LR B160R B1100R Maximum Repetitive Peak Reverse Voltage VRRM 20 20 40 40 60 100 V Maximum Average Forward Current IF(AV) 1 A Maximum Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) IFSM 30 A Operating Junction Temperature Range TOPR -55 to +125 -55 to +150 °C Storage Temperature Range TSTG -55 to +150 °C *RoHS COMPLIANT LEAD FREE *RoHS COMPLIANTVERSIONS AVAILABLE LEAD FREE VERSIONS ARE RoHS COMPLIANT* Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Condition or Model Min. Typ. Max. Unit Maximum Instantaneous Forward Voltage @1 A (NOTE 1) VF CD214A-B120LR CD214A-B140LR 0.37 0.38 VCD214A-B120R CD214A-B140R 0.47 0.50 CD214A-B160R 0.60 0.70 CD214A-B1100R 0.76 0.85 DC Reverse Current IR VR = VRRM CD214A-B120LR CD214A-B140LR 0.35 1.0 mA CD214A-B120R CD214A-B140R CD214A-B160R CD214A-B1100R 0.02 0.2 mA Typical Junction Capacitance CJ VR = 4 V, f = 1.0 MHz 110 pF Typical Thermal Resistance (NOTE 2) Junction to Ambient RθJA CD214A-B120R CD214A-B140R CD214A-B160R CD214A-B1100R °C/W CD214A-B120LR CD214A-B140LR 55 Junction to Lead RθJL CD214A-B120R CD214A-B140R CD214A-B160R CD214A-B1100R CD214A-B120LR CD214A-B140LR 17

3312 - 2 mm SMD Trimming Potentiometer Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CD214A-B1xR Series Schottky Barrier Rectifier Chip Diode Performance Graphs Forward Current Derating Curve Maximum Peak Forward Surge Current Typical Instantaneous Forward Characteristics Typical Reverse Characteristics Typical Junction Capacitance 1.0 0.5 02 55 0 75 100 125 150 Average Forward Rectified Current (Amps) Lead Temperature (°C) Resistive or Inductive Load PCB Mounted on 5.0 x 5.0 mm (0.2 x 0.2 inch) Copper Pad Areas 01 0 100 Peak Forward Surge Current (Amps) Number of Cycles @ 60 Hz 8.3 ms Single Half Sine-Wave (JEDEC Method) 0.01 0.10 0.001 Instantaneous Forward Current (A) Instantaneous Forward Voltage (Volts) 0.01 0.1 100 0.001 02 0 40 60 80 100 Instantaneous Reverse Current (mA) Percent of Rated Peak Reverse Voltage (%) TJ = 100 °C 400 100 0.1 1.0 10 100 Junction Capacitance (pF) Reverse Voltage (Volts) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVP-P CD214A-B120R, -B140R, CD214A-B120LR, -B140LR CD214A-B160R, -B1100R CD214A-B120LR, -B140LR CD214A-B120R, -B140R CD214A-B160R, -B1100R CD214A-B120LR, -B140LR CD214A-B120R, -B140R CD214A-B160R CD214A-B1100R CD214A-B120LR, -B140LR CD214A-B120R, -B140R, -B160R, -B1100R TJ = 25 °C TJ = 25 °C TJ = 100 °C CD214A-B1xL SERIES 1.0 0.5 02 55 0 75 100 125 150 Average Forward Rectified Current (Amps) Lead Temperature (°C) Resistive or Inductive Load PCB Mounted on 5.0 x 5.0 mm (0.2 x 0.2 inch) Copper Pad Areas 01 0 100 Peak Forward Surge Current (Amps) Number of Cycles @ 60 Hz 8.3 ms Single Half Sine-Wave (JEDEC Method) 0.01 0.10 0.001 Instantaneous Forward Current (A) Instantaneous Forward Voltage (Volts) 0.01 0.1 100 0.001 02 0 40 60 80 100 Instantaneous Reverse Current (mA) Percent of Rated Peak Reverse Voltage (%) TJ = 100 °C 400 100 0.1 1.0 10 100 Junction Capacitance (pF) Reverse Voltage (Volts) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVP-P CD214A-B120R, -B140R, CD214A-B120LR, -B140LR CD214A-B160R, -B1100R CD214A-B120LR, -B140LR CD214A-B120R, -B140R CD214A-B160R, -B1100R CD214A-B120LR, -B140LR CD214A-B120R, -B140R CD214A-B160R CD214A-B1100R CD214A-B120LR, -B140LR CD214A-B120R, -B140R, -B160R, -B1100R TJ = 25 °C TJ = 25 °C TJ = 100 °C CD214A-B1xL SERIES 1.0 0.5 02 55 0 75 100 125 150 Average Forward Rectified Current (Amps) Lead Temperature (°C) Resistive or Inductive Load PCB Mounted on 5.0 x 5.0 mm (0.2 x 0.2 inch) Copper Pad Areas 01 0 100 Peak Forward Surge Current (Amps) Number of Cycles @ 60 Hz 8.3 ms Single Half Sine-Wave (JEDEC Method) 0.01 0.10 0.001 Instantaneous Forward Current (A) Instantaneous Forward Voltage (Volts) 0.01 0.1 100 0.001 02 0 40 60 80 100 Instantaneous Reverse Current (mA) Percent of Rated Peak Reverse Voltage (%) TJ = 100 °C 400 100 0.1 1.0 10 100 Junction Capacitance (pF) Reverse Voltage (Volts) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVP-P CD214A-B120R, -B140R, CD214A-B120LR, -B140LR CD214A-B160R, -B1100R CD214A-B120LR, -B140LR CD214A-B120R, -B140R CD214A-B160R, -B1100R CD214A-B120LR, -B140LR CD214A-B120R, -B140R CD214A-B160R CD214A-B1100R CD214A-B120LR, -B140LR CD214A-B120R, -B140R, -B160R, -B1100R TJ = 25 °C TJ = 25 °C TJ = 100 °C CD214A-B1xL SERIES

3312 - 2 mm SMD Trimming Potentiometer F I H B C DIA. G A D D E Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CD214A-B1xR Series Schottky Barrier Rectifier Chip Diode Product Dimensions Recommended Pad Layout DIMENSIONS: MM (INCHES) Dimension CD214A-B1 Series A 4.5 ± 0.10 (0.177 ± 0.004) B 2.20 ± 0.10 (0.087 ± 0.004) C (Dia.) 0.50 (0.020) D 0.95 ± 0.20 (0.037 ± 0.008) E 0.96 +0.20/-0.10 DIMENSIONS: MM (INCHES) Typical Part Marking Dimension CD214A-B1 Series F 2.60 (0.102) MAX. G 1.47 (0.058) MIN. H 1.27 (0.050) MIN. I 5.14 (0.202) REF. DEVICE CODE: 102 = CD214A-B120R 102L = CD214A-B120LR 104 = CD214A-B140R 104L = CD214A-B140LR 106 = CD214A-B160R 110 = CD214A-B1100R 102 YWW DATE CODE: Y = LAST DIGIT OF YEAR WW = WEEK NUMBER How to Order CD 214A - B 1 20 L R Common Code CD = Chip Diode Package 214A = SMA/DO-214AC Compatible Model B = Schottky Barrier Series Maximum Average Forward Rectified Current 1 = 1 A Maximum Repetitive Peak Reverse Voltage 20 = 20 V 40 = 40 V 60 = 60 V 100 = 100 V Forward Voltage Suffix L = Low Forward Voltage Environmental Specifications

3312 - 2 mm SMD Trimming Potentiometer Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CD214A-B1xR Series Schottky Barrier Rectifier Chip Diode Packaging Information P A F E T 120 ° D D1 C Index Hole W B 30 pitches Direction of Feed 30 pitches End Trailer Device Leader Start d The product is dispensed in tape and reel format (see diagram below). DIMENSIONS: MM (INCHES) Item Symbol CD214A-B1 Series Carrier Width A 2.45 ± 0.10 (0.096 ± 0.004) Carrier Length B 4.75 ± 0.10 (0.187 ± 0.004) Carrier Depth C 1.51 ± 0.10 (0.059 ± 0.004) Sprocket Hole d 1.50 ± 0.10 (0.059 ± 0.004) Reel Outside Diameter D 178 ± 2.0 (7.008 ± 0.079) Reel Inner Diameter D1 50.0 (1.969) MIN. Feed Hole Diameter D2 13.0 ± 0.50 (0.512 ± 0.020) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 5.50 ± 0.05 (0.217 ± 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.10 (0.079 ± 0.004) Overall Tape Thickness T 0.40 (0.016) MAX. Tape Width W 12.00 ± 0.30 (0.472 ± 0.012) Reel Width W1 18.7 (0.736) MAX. Quantity per Reel -- 3,000 Asia-Pacific: Tel: +886-2 2562-4117 Email: asiacus@bourns.com Europe: Tel: +36 88 520 390 Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 Email: americus@bourns.com www.bourns.com