CD214A-B120 BOURNS | Alldatasheet

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■ Lead free versions available ■ RoHS compliant (lead free version)* ■ SMA package ■ Surface mount ■ Very low forward voltage drop General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop inc reasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AC (SMA) size format, whi ch offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V. Bourns® Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes roll away much more difficult. Parameter Symbol CD214- Unit B120 B130 B130L B140 B150 B160 B170 B180 B190 B1100 Typical Junction CT 110 110 100 110 110 110 30 30 30 30 pFCapacitance* Reverse Current (Max.) IR 500 500 1000 500 500 500 500 500 500 500 µAat Rated VR) Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) How To Order CD 214A - B 1 30 L __ Common Code Chip Diode Package

  • 214A = SMA/DO-214AC Model B = Schottky Barrier Series Average Forward Current (Io) Code 1 = 1 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 30 = 30 V 40 = 40 V 100 = 100 V Forward Voltage Suffix L = Low Forward Voltage Vf (CD214-B130L) Terminations LF = 100 % Sn (lead free) Blank = Sn/Pb Reliable Electronic Solutions Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555 • Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) * Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. ** Thermal resistance junction to lead. *RoHS COMPLIANTVERSIONS AVAILABLE *RoHS Directive 2002/95/EC Jan 27 2003 including Annex

Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Product Dimensions Recommended Pad Layout Physical Specifications Typical Part Marking Dimension SMA (DO-214AC) A 4.06 - 4.57 (0.160 - 0.180) B 2.29 - 2.92 (0.090 - 0.115) C 1.27 - 1.63 (0.050 - 0.064) D 0.15 - 0.31 (0.006 - 0.110) E 4.83 - 5.59 (0.190 - 0.220) F 0.05 - 0.20 (0.002 - 0.008) G 2.01 - 2.62 (0.080 - 0.103) H 0.76 - 1.52 (0.030 - 0.060) B G F D C H E A A C B MM (INCHES)DIMENSIONS: Dimension SMA (DO-214AC) A (Max.) 2.69 (0.106) B (Min.) 2.10 (0.083) C (Min.) 1.27 (0.050) MM (INCHES)DIMENSIONS:

Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B120, CD214A-B130, CD214A-B140, CD214A-B150 & CD214A-B160 Derating Curve Capacitance Between Terminals Forward Characteristics Reverse Characteristics 0.1 0.01 Forward Current (Amps) Forward Voltage (Volts) 1.2 Tj=75 °C PULSEWIDTH 300µs B120 to B140 B150 to B160 100 0.1 0.001 0.01 Reverse Current (mAmps) 0 20 40 60 80 100 140 Percent of Rated Peak Reverse Voltage (%) 120 Tj=25 °C Tj=100 °C Tj=125 °C 1.25 1.00 0.75 0.50 0.25 0.00 25 50 75 100 125 150 Average Forward Current (Amps) Lead Temperature (°C) Single Phase Half Wave 60 Hz Resistive or Inductive Load 1000 100 200 300 400 500 600 700 800 900 02 0 4 0 6 0 8 0 1 0 0 Capacitance (pF) Reverse Voltage (Volts) F = 1 MHz Ta = 25 °C

Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B130L Derating Curve Capacitance Between Terminals Forward Characteristics Reverse Characteristics 0.1 0.01 Forward Current (Amps) Forward Voltage (Volts) 1.2 Tj=75 °C PULSEWIDTH 300µs 100 0.1 0.001 0.01 Reverse Current (mAmps) 0 20 40 60 80 100 140 Percent of Rated Peak Reverse Voltage (%) 120 Tj=25 °C Tj=100 °C Tj=125 °C 1.25 1.00 0.75 0.50 0.25 0.00 25 50 75 100 125 150 Average Forward Current (Amps) Lead Temperature (°C) Single Phase Half Wave 60 Hz Resistive or Inductive Load 1000 100 200 300 400 500 600 700 800 900 02 0 4 0 6 0 8 0 1 0 0 Capacitance (pF) Reverse Voltage (Volts) F = 1 MHz Ta = 25 °C

Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Rating and Characteristic Curves: CD214A-B170, CD214A-B180, CD214A-B190 & CD214A-B1100 Derating Curve Capacitance Between Terminals Forward Characteristics Reverse Characteristics 0.1 0.01 Forward Current (Amps) Forward Voltage (Volts) 1.2 Tj=75 °C PULSEWIDTH 300µs 100 0.1 0.001 0.01 Reverse Current (mAmps) 0 20 40 60 80 100 140 Percent of Rated Peak Reverse Voltage (%) 120 Tj=25 °C Tj=100 °C Tj=125 °C 1.25 1.00 0.75 0.50 0.25 0.00 25 50 75 100 125 150 Average Forward Current (Amps) Lead Temperature (°C) Single Phase Half Wave 60 Hz Resistive or Inductive Load 1000 100 200 300 400 500 600 700 800 900 0 20 40 60 80 100 Capacitance (pF) Reverse Voltage (Volts) F = 1 MHz Ta = 25 °C

CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode Packaging Information The product will be dispensed in Tape and Reel format (see diagram below). P A F E T 120 ° D D1 C Index Hole W B 10 pitches (min.) Direction of Feed 10 pitches (min.) End Trailer Device Leader Start d Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. MM (INCHES)DIMENSIONS: Item Symbol SMA (DO-214AC) Carrier Width A 2.90 ± 0.10 (0.114 - 0.004) Carrier Length B 5.59 ± 0.10 (0.220 - 0.004) Carrier Depth C 2.36 ± 0.10 (0.093 - 0.004) Sprocket Hole d 1.55 ± 0.05 (0.061 - 0.002) Reel Outside Diameter D 330 (12.992) Reel Inner Diameter D 1 50.0 MIN.(1.969) Feed Hole Diameter D 2 13.0 ± 0.20 (0.512 - 0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 - 0.004)) Punch Hole Position F 5.50 ± 0.05 (0.217 - 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 - 0.004) Sprocket Hole Pitch P 0 4.00 ± 0.10 (0.157 - 0.004) Embossment Center P 1 2.00 ± 0.05 (0.079 - 0.002) Overall Tape Thickness T 0.30 ± 0.10 (0.012 - 0.004) Tape Width W 12.00 ± 0.20 (0.472 - 0.008) Reel Width W 1 18.4 MAX.(0.724) Quantity per Reel -- 5,000 REV. 02/05 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.