CD13003D

CD13003D MULTICOMP | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 6

Technical content

Features

• With Built - in Integrated Diode between Emitter & Collector
• This product is available in AEC-Q101 Compliant and PPAP Capable also. Absolute Maximum Ratings (Ta = 25°C Unless otherwise specified) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 VCollector Emitter (sus) Voltage VCEO 400 Emitter Base Voltage VEBO 9 Collector Current Continuous IC 2 A Pulse1 ICM 3 Collector Current Continuous IB 0.75 Pulse1 IBM 1.5 Emitter Current Continuous IE 2.25 Pulse1 IEM 4.5 Power Dissipation @ Ta=25 ºC PD 1.4 W Derate Above 25ºC 11.2 mW/°C Power Dissipation @ Tc=25 ºC PD 45 W Derate Above 25ºC 360 mW/°C Operating And Storage Junction Temperature Range TJ, TSTG -65 to +150 °C Thermal Resistance Parameter Symbol Value Unit Junction to Case Rth (j-c) 2.77 °C/W Junction to Ambient Rth (j-a) 89 Maximum Lead Temperature for Soldering Purpose: 1/8” from Case for 5 Seconds TL 275 °C

Applications

• Suitable for Lighting, Switching Regulator and Motor Control Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle=10%

Page <2> V1.005/04/23 Silicon Power Transistor Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro Parameter Symbol Test Condition Value Unit Min. Typ. Max. Collector Base Voltage VCBO IC=1mA, IE=0 700 -- V Collector Emitter (sus) Voltage VCEO(SUS)1 IC=10mA, IB=0 400 Collector Cut Off Current ICBO VCB=680V, IE=0 mAVCB=680V, IE=0, TC=100ºC 5 Emitter Cutoff Current IEBO VEB=9V, IC=0 1 DC Current Gain hFE2 IC=500mA, VCE=5V2 15 25 hFE IC=1A,VCE=5V 5 25 Collector Emitter Saturation Voltage VCE(sat)1 IC=0.5A, IB=0.1A 0.5 V IC=1A, IB=0.25A 1 IC=1.5A, IB=0.5A 2.5 IC=1A, IB=0.25A,TC=100ºC 1 Base Emitter Saturation Voltage VBE(sat)1 IC=0.5A, IB=0.1A 1 IC=1A, IB=0.25A 1.2 IC=1A, IB=0.25A,TC=100ºC 1.1 Integrated Diode Forward Voltage VFEC IF=2A 2 Electrical Characteristics at (Ta = 25°C Unless otherwise specified) Parameter Symbol Test Condition Value Unit Min. Typ. Max. Current Gain Bandwidth Product fT IC=100mA, VCE=10V, f=1MHz 4 -- MHz Output Capacitance COB VCB=10V, f=0.1MHz -- 21 pF Parameter Symbol Test Condition Value Unit Min. Typ. Max. Turn On Time ton VCC=125V, IC=1A, IB1=0.2A, IB2=0.2A 1.1 μSStorage Time tstg 2 4 Fall Time tr -- 0.7 hFE2 Classification:- A B 15-19 19-25 Dynamic Characteristics Switching Time Note: 1. Pulse Test:- PW=300μs, Duty Cycle=2%

Page <4> V1.005/04/23 Silicon Power Transistor Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro Wave Profiles in Tabular Form Profile Feature Sn-Pb System Pb-Free System Average Ramp-Up Rate ~200°C/second ~200°C/second Heating rate during preheat Typical 1-2, Max 4°C/sec Typical 1-2, Max 4°C/Sec Final preheat Temperature Within 125°C of Solder Temp Within 125°C of Solder Temp Peak Temperature 235°C 260°C max. Time within +0 -5°C of actual Peak 10 seconds 10 seconds Ramp-Down Rate 3°C/second max. 5°C/second max. Recommended Wave Solder Profiles The Recommended solder Profile For Devices with Pb-free terminal plating where a Pb-free solder is used The Recommended solder Profile For Devices with Pb-free terminal plating used with leaded solder, or for devices with leaded terminal plating used with leaded solder

Page <5> V1.005/04/23 Silicon Power Transistor Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro Typical Characteristic Curves Fig 1: Collector current v/s Collector Emitter

Page <6> V1.005/04/23 Silicon Power Transistor Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro Important Notice : This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. Part Number Table Description Part Number Silicon Power Transistor, NPN, TO-126 CD13003D Dimensions TO-126 Leaded Plastic Package Dimensions : Millimetres DIM MIN. MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E 2.25 TYP F 0.49 0.75 G 4.5 TYP L 15.7 TYP M 1.27 TYP N 3.75 TYP P 3 3.2 S 2.5 TYP