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Document overview
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Technical content
Features
■ RoHS compliant* ■ Leadless chip form ■ High current capability ■ Low forward voltage ■ Halogen free**
Applications
■ Switch Mode Power Supplies (SMPS) ■ Portable equipment batteries ■ High frequency rectification ■ DC/DC converters ■ Telecommunications Additional Information Click these links for more information: PRODUCT SELECTOR TECHNICAL LIBRARY INVENTORY SAMPLES CONTACT General Information Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers small-signal Schottky Barrier Diodes for switching and rectification applications, in a compact chip package compatible with SOD-123 size format. The Schottky Barrier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V and 40 V. Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CD123D- Unit B120R B140R B140LR Maximum Repetitive Peak Reverse Voltage VRRM 20 40 40 V Maximum Average Forward Rectified Current (TA = 55 °C) I F(AV) 1A Peak Forward Surge Current 8.3 ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) IFSM 20 A Operating Temperature Range TJ -55 to +125 °C Storage Temperature Range TSTG -55 to +150 °C Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Instantaneous Forward Voltage VF IF = 0.1A CD123D-B120R CD123D-B140R 0.32 V IF = 0.5 A 0.40 IF = 1.0 A 0.46 0.50 IF = 0.1A CD123D-B140LR 0.24 IF = 0.5 A 0.31 IF = 1.0 A 0.37 0.38 Repetitive Peak Reverse Current I R VR = VRRM CD123D-B120R CD123D-B140R 0.015 0.2 mA CD123D-B140LR 0.30 1.0 Junction Capacitance C J VR = 4 V, f = 1.0 MHz CD123D-B120R CD123D-B140R 110 pF CD123D-B140LR 115 Thermal Resistance R θJA Junction to Ambient (1) 190 °C/WRθJL Junction to Case (2) 60 NOTES: (1) Pulse test width PW = 300 us, 1 % duty cycle. * RoHS Directive 2015/863, Mar 31, 2015 and Annex. ** Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br) and Chlorine (Cl) content is 1500 ppm or less. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov
CD123D-B1xR Schottky Barrier Chip Diode Series Performance Graphs - Model CD123D-B120R & CD123D-B140R Forward Current Derating Curve Maximum Non-Repetitive Peak Forward Surge Current Reverse Voltage (V) Junction Capacitance (pF) Percent of Rated Peak Reverse Voltage (%) Instantaneous Reverse Current (mA) 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 Lead Temperature (°C) Average Forward Current (A) 11 0 100 8.3 ms Single Half Sine-Wave Number of Cycles at 60 Hz Peak Forward Surge Current (A) Forward Voltage (V) Instantaneous Forward Current (A) 0.001 0.01 0.10 1.00 10.00 TA = 25 °C 0.001 0.01 0.10 1.00 10.00 100.00 0 20 40 60 80 100 TJ = 25 °C TJ = 100 °C 100 400 0.1 1 10 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVP-P Typical Forward Characteristics Typical Reverse Characteristics Typical Junction Capacitance Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
CD123D-B1xR Schottky Barrier Chip Diode Series Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Performance Graphs - Model CD123D-B140LR Forward Current Derating Curve Maximum Non-Repetitive Peak Forward Surge Current 100 125 150 0 2 55 07 5 0.2 0.4 0.6 0.8 1.0 1.2 Lead Temperature (°C) Average Forward Current (A) 8.3 ms Single Half Sine-Wave 11 0 100 Number of Cycles at 60 Hz Peak Forward Surge Current (A) Forward Voltage (V) Instantaneous Forward Current (A) 0.01 0.10 1.00 10.00 Percent of Rated Peak Reverse Voltage (%) Instantaneous Reverse Current (mA) .0.001 0.01 0.10 1.00 10.00 100.00 0 20 40 60 80 100 TJ = 25 °C TJ = 100 °C Reverse Voltage (V) Junction Capacitance (pF) 100 400 0.1 1 10 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVP-P Typical Forward Characteristics Typical Reverse Characteristics Typical Junction Capacitance
CD123D-B1xR Schottky Barrier Chip Diode Series Product Dimensions E A D D F G B C Dimension CD123D-B1xR A 3.40 ± 0.2 (0.0748 ± 0.0079) B 1.9 ± 0.2 (0.0748 ± 0.0079) C 1.6 P. (0.0630) TYP. D 0.7 ± 0.2 (0.0276 ± 0.0079) E 0.96 +0.2/-0.1 F 2.3 ± 0.2 (0.0906 ± 0.0079) G 0.43 ± 0.2 (0.0169 ± 0.0079) DIMENSIONS: MM (INCHES) Recommended Pad Layout D E C B A Dimension CD123D-B1xR A 2.73 (0.107) MIN. B 4.26 (0.168) REF. C 1.60 (0.063) MIN. D 0.67 (0.026) MAX. E 0.86 (0.034) MIN. Environmental Specifications Typical Part Marking DEVICE CODE: 20 = CD123D-B120R 40 = CD123D-B140R 40L = CD123D-B140LR 40L How to Order CD 123D - B 1 40 L R Common Code CD = Chip Diode Package 123D = SOD-123 Size Model B = Schottky Barrier Diode Average Forward Current 1 = 1 A Reverse Voltage 40 = 40 V Forward Voltage (Blank) = Standard L = Low Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
CD123D-B1xR Schottky Barrier Chip Diode Series Packaging Information The product will be dispensed in tape and reel format (see diagram below). P A F E T 120 ° D D1 C Index Hole W POLARITY STRIP B Direction of Feed
30 PITCHES 30 PITCHES
d Devices are packed in accordance with EIA standard EIA-481-D and specifications shown here. DIMENSIONS: MM (INCHES) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. Item Symbol CD123D-B1xR Carrier Width A 2.20 ± 0.10 0.087 ± 0.004 Carrier Length B 3.65 ± 0.10 (0.144 ± 0.004) Carrier Depth C 1.75 ± 0.10 (0.069 ± 0.004) Sprocket Hole d 1.50 ± 0.10 (0.059 ± 0.004) Reel Outside Diameter D 178 ± 2.0 (7.008 ± 0.079) Reel Inner Diameter D 1 (1.969) MIN. Feed Hole Diameter D 2 13.0 ± 0.5 (0.512 ± 0.020) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 5.50 ± 0.05 (0.217 ± 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 ± 0.004) Sprocket Hole Pitch P 0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P 1 2.00 ± 0.10 (0.079 ± 0.004) Overall Tape Thickness T 0.40 (0.016) MAX. Tape Width W 12.00 ± 0.30 (0.472 ± 0.012) Reel Width W 1 18.7 (0.736) MAX. Quantity per Reel -- 3000 REV. 08/19 Asia-Pacific: Tel: +886-2 2562-4117 Email: asiacus@bourns.com EMEA: Tel: +36 88 885 877 Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 Email: americus@bourns.com www.bourns.com
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