CBR25F-010P_15 CENTRAL | Alldatasheet
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25 AMP, 100 THRU 600 VOLT
DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR25F-010P series devices are silicon, single phase, full wave bridge rectifiers designed for fast recovery applications. The molded epoxy case has a built-in metal baseplate for heat sink mounting. The device utilizes standard 0.25” FASTON terminals. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) CBR25F SYMBOL -010P -020P -040P -060P UNITS Peak Repetitive Reverse Voltage VRRM 100 200 400 600 V DC Blocking Voltage V R 100 200 400 600 V RMS Reverse Voltage V R(RMS) 70 140 280 420 V Average Forward Current (TC=60°C) I O 25 A Peak Forward Surge Current I FSM 300 A RMS Isolation Voltage (case to lead) V iso 2500 Vac Operating and StorageJunction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJC 1.5 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C) SYMBOL TEST CONDITIONS MIN MAX UNITS IR V R=Rated VRRM 10 μA VF I F=12.5A 1.3 V trr I F=0.5A, IR=1.0A, Irr=0.25A (100V, 200V, 400V) 200 ns trr I F=0.5A, IR=1.0A, Irr=0.25A (600V) 350 ns CASE FP R1 (4-November 2013) www.centralsemi.com
CASE FP - MECHANICAL OUTLINE MARKING: FULL PART NUMBER www.centralsemi.com R1 (4-November 2013)