CBD20100LCT PANJIT | Alldatasheet
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Technical content
PAGE . 1December 29,2010-REV.00 CBD20100LCT LOW VF SCHOTTKY RECTIFIER VOLTAGE 100 Volts 20 Amperes
FEATURES
- Low forward voltage drop, low power losses
- High efficiency operation
- In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case : TO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight: 0.0655 ounces, 1.859 grams. CURRENT MAXIMUM RATINGS(TA=25oC unless otherwise noted) ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) Note : 1. Mounted on heatsink (7.7cm x 7.7cm x 2pec) copper and areas. 2. Minimum pad for each lead on board. PARAMETER SYMBOL VALUE UNIT Maximum repetitive peak reverse voltage VRRM 100 V Maximum average forward rectified current per device per diode I F(AV) 10 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode per diode I FSM 200 A Typical thermal resistance (Note 2) (Note 1) RΘJA RΘJC 2.5 oC/W Operating junction temperature range TJ -55 to + 150 oC Storage temperature range TSTG -55 to + 150 oC PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNIT Breakdown voltage per diode VBR I R=1.0mA 100 - V Instantaneous forward voltage per diode V F I F=3A I F=5A I F=10A TJ=25oC 0.50 0.60 0.76 0.80 V I F=3A I F=5A I F=10A TJ=125oC 0.46 0.54 0.63 0.66 V Reverse current per diode I R VR=70V 25 - μA VR=100V TJ=25oC TJ=125oC 400 μA mA 0.419(10.66) 0.387(9.85) 0.139(3.55) MIN. 0.058(1.47) 0.042(1.07) 0.038(0.96) 0.019(0.50) 0.196(5.00) 0.163(4.16) 0.054(1.39) 0.045(1.15) 0.115(2.92) 0.080(2.03) 0.025(0.65)MAX. 0.177(4.5) MAX. 0.548(13.93)
PAGE . 2December 29,2010-REV.00 CBD20100LCT 0 25 50 75 100 125 150 TC, Case Temperature (°C) IF, Forward Current (A) 0.001 0.01 0.1 100 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%)IR,Reverse Current (mA) TJ = 25°C TJ = 75°C TJ = 100°C TJ = 125°C Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 1000 10000 0.1 1 10 100 VR, Reverse Bias Voltage (V) CJ, Junction Capacitance (pF) 0.1 100 VF, Forward Voltage (V) IF, Forward Current (A) TJ = 125°C TJ = 150°C TJ = 25°C TJ = 75°C Per Diode Per Diode Per Diode Per Diode