CBAT54 CENTRAL | Alldatasheet
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MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage V R 30 V Continuous Forward Current I F 200 mA Peak Repetitive Forward Current I FRM 300 mA Forward Surge Current, tp=10ms I FSM 600 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS IR VR=25V 2.0 µA VF IF=0.1mA 240 mV VF IF=1.0mA 320 mV VF IF=10mA 400 mV VF IF=30mA 500 mV VF IF=100mA 800 mV Cd VR=1.0V, f=1.0 MHz 10 pF trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 5.0 ns CBAT54 CBAT54A CBAT54C CBAT54S SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-23 CASE Central Semiconductor Corp. TM R0 (13-January 2005) DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAT54 Series types are Silicon Schottky Diodes in an SOT-23 Surface Mount Package. CBAT54: SINGLE MARKING CODE: CL4 CBAT54A: DUAL, COMMON ANODE MARKING CODE: CL42 CBAT54C: DUAL, COMMON CATHODE MARKING CODE: CL43 CBAT54S: DUAL, IN SERIES MARKING CODE: CL44
Semiconductor Corp. TM CBAT54 CBAT54A CBAT54C CBAT54S SURFACE MOUNT SILICON SCHOTTKY DIODES R0 (13-January 2005) SOT-23 CASE - MECHANICAL OUTLINE MARKING CODE: CL43 MARKING CODE: CL44 MARKING CODE: CL4 MARKING CODE: CL42 CBAT54 CBAT54A CBAT54C CBAT54S 1) Anode 1) Cathode D2 1) Anode D2 1) Anode D2 2) No Connection 2) Cathode D1 2) Anode D1 2) Cathode D1 3) Cathode 3) Anode D1, Anode D2 3) Cathode D1, Cathode D2 3) Anode D1, Cathode D2 D1 D2 D1 D2 D1 D2 LEAD CODE: LEAD CODE: LEAD CODE:LEAD CODE: