CBAS17 CENTRAL | Alldatasheet
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CentralCentralCentralCentralCentral TM MAXIMUM RATINGS (TA=25oC) SYMBOL UNITS Peak Repetitive Forward Current I FRM 250 mA Power Dissipation P D 350 mW Operating and Storage Junction Temperature T J,Tstg -65 to +150 oC Thermal Resistance Θ JA 357 oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS VF IF=0.1mA .580 .665 .680 V VF IF=1.0mA .665 .745 .760 V VF IF=5.0mA .725 .805 .820 V VF IF=10mA .750 .825 .840 V VF IF=100mA .870 .920 .960 V IR VR =4.0V 5.0 µA CT VR =0, f=1 MHz 140 pF SOT-23 CASE CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91.
C All dimensions in inches (mm). ANO CONNECTION