CB230_15 MARKTECH | Alldatasheet
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Technical content
Subject to change without notice. www.cree.com
FEATURES
0.85 mW (463 nm) Superior SiC Substrate Technology Excellent Chip-to-Chip Consistency High Reliability Single Wire Bond Structure Class 2 ESD Rating
APPLICATIONS
Electronic Signs and Displays Indicator Lights SuperBlue™ Generation II LEDs Preliminary Data Sheet C430CB230-S200 Cree’s low-current SuperBlue Generation II LEDs combine highly efficient GaN with Cree’s proprietary G•SiC® substrate to deliver the ultimate price/performance for blue LEDs. The C430CB230-S2100 is designed for automotive applications or any application where wavelength stability and chip robustness are critical. C430CB230-S200 Chip Diagram D ata Sheet: CPR3D M Rev. - Top View Bottom View 200 x 200 μm SiC Substrate t = 250 μm Backside Metallization Gold Bond Pad 114 μm Diameter Die Cross Section Cathode (-) Anode (+) Mesa (junction) 180 x 180 μm
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc. 2 CPR3DM Rev. - Cree, Inc.
4600 Silicon Drive
Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Maximum Ratings at TA = 25°C Notes &3 C430CB230-S200 DC Forward Current 15 mA Peak Forward Current (1/10 duty cycle @ 1kHz) 35 mA LED Junction Temperature 125°C Reverse Voltage 5 V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Electrostatic Discharge Threshold (HBM)Note 2 1000 V Electrostatic Discharge Classification (MIL-STD-883E)Note 2 Class 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 0 mA Note 3 Part Number Forward Voltage (Vf, V) Radiant Flux (P, mW) Reverse Current [I(Vr=5V), μA] Peak Wavelength (λd, nm) Dominant Wavelength (λd, nm) Full Width Half Max (λD, nm) C430CB230-S2100 4.0 4.5 0.425 0.80 10 423 461 463 465 59 Mechanical Specifications C430CB230-S000 Description Dimension Tolerance P-N Junction Area (μm 2) 180 x 180 ± 35 Top Area (μm 2) 200 x 200 ± 35 Bottom Area (μm 2) 200 x 200 ± 35 Chip Thickness (μm) 250 ± 25 Au Bond Pad Diameter (μm) 114 ± 20 Au Bond Pad Thickness (μm) 1.1 ± 0.5 Back Contact Metal Diameter (μm) 114 ± 20 Notes: Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (<5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The ESD classification of Class II is based on sample testing according to MIL-STD-883E. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 10 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an integrating sphere using Illuminance A.
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc. 3 CPR3DM Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the CB230 LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Wavelength Shift vs Forward Current -1.00 -0.50 0.00 0.50 1.00 0 5 10 15 20 25 If (mA) Shift (nm) Forward Current vs Forward Voltage 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 Vf (V) If (mA) Wavelength Shift vs Forward Current -1.00 -0.50 0.00 0.50 1.00 0 5 10 15 20 25 If (mA) Shift (nm) Forward Current vs Forward Voltage 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 Vf (V) If (mA) Relative Intensity vs Forward Voltage 100 110 120 130 140 150 160 170 180 0 5 10 15 20 25 If (mA) % Relative Intensity
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc. 4 CPR3DM Rev. - Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the CB230 LED product. Actual patterns will vary slightly for each chip.