CAT24AA16_18 ONSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Standard and Fast I2C Protocol Compatible
  • Supports 1 MHz Clock Frequency
  • 1.7 V to 5.5 V Supply V oltage Range
  • 16−Byte Page Write Buffer
  • Hardware Write Protection for Entire Memory
  • Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs (SCL and SDA)
  • Low Power CMOS Technology
  • 1,000,000 Program/Erase Cycles
  • 100 Year Data Retention
  • Industrial Temperature Range
  • This Device is Pb−Free, Halogen Free/BFR Free and are RoHS Compliant VCC VSS SDA SCL WP CAT24AA16

Figure 1. Functional Symbol dimensions section on page 203 of this data sheet.

ORDERING INFORMATION

TSOT−23 TB SUFFIX CASE 419AE VCC WP SDA VSS SCL 1 (Top View) TSOT−23 PIN FUNCTION Pin Name SDA Function Serial Data Input/Output SCL Clock Input WP Write Protect VCC Power Supply VSS Ground NC No Connect

Table 1. ABSOLUTE MAXIMUM RATINGS should not be assumed, damage may occur and reliability may be affected.

  1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V

undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns. Table 2. REABILITY CHARACTERISTICS (Note 2)

  1. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100

Table 3. DC OPERATING CHARACTERISTICS (VCC = 1.7 V to 5.5 V, TA = −40°C to 85°C, unless otherwise specified.) Table 4. PIN IMPEDANCE CHARACTERISTICS (VCC = 1.7 V to 5.5 V, TA = −40°C to 85°C, unless otherwise specified.)

  1. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
  2. When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull −down is relatively strong;

the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x VCC), the strong pull−down reverts to a weak current source.

Table 5. AC CHARACTERISTICS (Note 6) (VCC = 1.7 V to 5.5 V, TA = −40°C to 85°C, unless otherwise specified.)

1 MHz

  1. Test conditions according to “AC Test Conditions” table.
  2. Tested initially and after a design or process change that affects this parameter.
  3. t PU is the delay between the time VCC is stable and the device is ready to accept commands.

Table 6. A.C. TEST CONDITIONS

www.onsemi.com Range (Note 24) Lead Finish Shipping† CAT24C02TDI−GT3 UK TSOT−23−5 Industrial NiPdAu Tape & Reel, 3,000 Units / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 9. All packages are RoHS −compliant (Lead−free, Halogen−free). 10.The standard lead finish is NiPdAu. 11. For additional package and temperature options, please contact your nearest ON Semiconductor Sales office. 12.For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Ree l Packaging Specifications Brochure, BRD8011/D. ON Semiconductor is licensed by the Philips Corporation to carry the I2C bus protocol.

TSOT−23, 5 LEAD CASE 419AE−01 ISSUE O DATE 19 DEC 2008 E1 E e b D c A TOP VIEW SIDE VIEW END VIEW L Notes: (1) All dimensions are in millimeters. Angles in degrees. (2) Complies with JEDEC MO-193. SYMBOL θ MIN NOM MAX /C0113 A b c D E e L 0º 8º 0.01 0.80 0.30 0.12 0.30 0.05 0.87 0.15

2.90 BSC

2.80 BSC

1.60 BSC

0.95 TYP

0.40

0.60 REF

0.25 BSC

1.00 0.10 0.90 0.45 0.20 0.50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS http://onsemi.com © Semiconductor Components Industries, LLC, 2002 October, 2002 − Rev. 0 Case Outline Number: XXX DOCUMENT NUMBER: STATUS: REFERENCE: DESCRIPTION: 98AON34392E ON SEMICONDUCTOR STANDARD TSOT−23, 5 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2

DOCUMENT NUMBER: 98AON34392E PAGE 2 OF 2 ISSUE REVISION DATE O RELEASED FOR PRODUCTION FROM POD #TSOT235−005−01 TO ON SEMICONDUCTOR. REQ. BY B. BERGMAN.

19 DEC 2008

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