CAS100H12AM1_13 MOLEX | Alldatasheet

Document overview

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Technical content

Features

  • Ultra Low Loss
  • Zero Turn-off Tail Current from MOSFET
  • Zero Reverse Recovery Current from Diode
  • High-Frequency Operation
  • Positive Temperature Coefficient on VF and VDS(on)
  • AlSiC Baseplate, AMB Si3N4 Substrate System Benefits
  • Enables Compact and Lightweight Systems
  • High Efficiency Operation
  • Ease of Transistor Gate Control
  • Reduced Cooling Requirements
  • Reduced System Cost

Applications

  • High Power Converters
  • Motor Drives
  • Solar Inverters
  • UPS and SMPS
  • Induction Heating Package Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes VDS Drain - Source Voltage 1.2 kV VGS Gate - Source Voltage -5/+20 V ID Continuous Drain Current 168 A VGS = 20V, TC=25˚C Fig. 25

117 VGS = 20V, TC=90˚C

ID(pulse) Pulsed Drain Current 400 A Pulse width Limited by Tjmax,TC = 25˚C TJ Junction Temperature 150 ˚C TC ,TSTG Case and Storage Temperature Range -55 to +125 ˚C Visol Case Isolation Voltage 6 kV AC, t=1min LStray Stray Inductance 20 nH Measured from D1 to S2 M Mounting Torque 2.94 Nm G Weight 150 g Measured without fasteners Clearance Distance 12.2 mm Terminal to terminal Creepage Distance 17.3 mm Terminal to terminal 20.2 mm Terminal to base plate Pd Power Dissipation 568 W Fig 24 Part Number Package Marking CAS100H12AM1 Half-Bridge Module CAS100H12AM1 VDS 1.2 kV RDS(on) (TJ = 25˚C) 16 mΩ EOFF (TJ = 125˚C) 1.8 mJ

CAS100H12AM1,Rev. A Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain - Source Breakdown Voltage 1.2 kV VGS, = 0V, ID = 100uA VGS(th) Gate Threshold Voltage 2.0 2.5 V VDS = VGS, ID = 5mA Fig. 9 2.6 3.1 VDS = VGS, ID = 50mA

1.8 VDS = VGS, ID = 5mA, TJ = 150ºC

2.4 VDS = VGS, ID = 50mA, TJ = 150ºC

IDSS Zero Gate Voltage Drain Current 5 500 μA VDS = 1200V, VGS = 0V 50 1250 VDS = 1200V, VGS = 0V, TJ = 150ºC IGSS Gate-Source Leakage Current 0.25 μA VGS, = 20V, VDS = 0V RDS(on) On State Resistance 16 20 mΩ VGS = 20V, ID = 100A Fig. 7 20 24 VGS = 20V, ID = 100A, TJ = 150ºC gfs Transconductance S VDS = 20V, ID = 100A Fig. 8

32 VDS = 20V, ID = 100A, TJ = 150ºC

Ciss Input Capacitance 10.7 nF VDS = 600V, VGS = 0V f = 1MHz, VAC = 25mV Fig. 16,17Coss Output Capacitance 0.970 Crss Reverse Transfer Capacitance 0.037 EON Turn-On Switching Energy (25ºC) (125ºC) 4.6 3.9 mJ VDD = 800V, VGS = +20V/-5V ID = 100A, RG = 5.1Ω Inductive Load = 200 μH Note: IEC 60747-8-4 Definitions Fig. 21 EOff Turn-Off Switching Energy (25ºC) (125ºC) 1.7 1.8 mJ RG Internal Gate Resistance 1.25 Ω f = 1MHz, VAC = 25mV QG Gate Charge 490 nC VDD= 600V, ID= 100A Fig. 18 Resistive Switching td(on) Turn-on delay time 58 ns VDD = 800V, RLOAD = 8Ω VGS = +20/-5V RG = 5.1Ω Note: IEC 60747-8-4 Definitions Fig. 19, 20 tr(on) VS1/D2 fall time 90% to 10% 76 ns td(off) Turn-off delay time 82 ns tf(off) VS1/D2 rise time 10% to 90% 46 ns

CAS100H12AM1,Rev. A Free-Wheeling SiC Schottky Diode Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 1.8 2.2 V IF = 100A, VGS = 0 Fig. 11 2.5 IF = 100A, TJ = 150ºC Fig. 12 QC Total Capacitive Charge 1.6 μC IF = 100A, VR = 600V diF/dt = 2200A/μs, TJ = 25ºCtRR Reverse Recovery Time 47 ns ERR Reverse Recovery Energy 0.5 mJ Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.22 0.24 ˚C/W RthJCD Thermal Resistance Juction-to-Case for Diode 0.35 0.37 Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive VDS overshoots. Please Refer to application note: [CPWR-AN12] Design Considerations when using Cree SiC Modules.

CAS100H12AM1,Rev. A Circuit Diagram 22V 6.8V RG(int) 22V 6.8V RG(int) G1 RTN G2 RTN S1/D2

CAS100H12AM1,Rev. A Package Dimensions (mm)

CAS100H12AM1,Rev. A This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Package Dimensions (mm) Package Dimensions (mm)