CA91 FUJITSU | Alldatasheet
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DS06-10801-4EFUJITSU SEMICONDUCTOR DATA SHEET Semicustom CMOS AccelArrayTM CA91 Series ■ DESCRIPTION AccelArrayTM* is a new structured ASIC family, offering short development time, and low development cost with pre-diffused IP macros into base masters and pre-designed common 3 to 4 metal layers out of 6 to 7 layers. By using 0.11 µm CMOS process technology, the devices can support 6 million logic gates, 4.55 Mbits SRAM and 3.125 Gbps high speed transmission macros. Ultra-high pin count FC-BGA (up to 729 pins to 1681 pins) packages are available. * : AccelArrayTM is a trademark of Fujitsu Limited. ■ FEATURES
- High-speed, large scale ASIC produced in short development time: T A T = One third compared with Standard Cell ASICs (target value) Uses an architecture that simplifies physical design tasks. Pre-designed common masters with IR-drop free. Pre-designed test circuit insertio n to reduce test synthesis tasks. Uses a dedicated timing-driven layout tool to reduce development time. Signal Integrity Free (pre-designed main clock trees without design verifications) Max built-in gate number : 6,000,000 gates or more T echnology : 0.11 µm Silicon gate CMOS, 6 to 7-metal layers (wiring material: copper), low-k inter-layer film Internal cells support high-speed operation HTSL.) . Operation junction temperature : −40 °C to +125 °C (standard) Max operating frequency: 333 MHz (internal circuit) Support for fast interface/macro (200 MHz/400 MHz DDR I/F , 2.5 Gbps PCI Express, 3.125 Gbps XAUI, etc.) Special interfaces (P-CML,LVDS,PCI,HSTL,SSTL-2, etc.) Embedded macro : PLL, SRAM 8-channel clock supply system incorporating a PLL Supports Memory-BIST/Boundary-SCAN Package : FC-BGA (729 pins to 1681 pins) ARM core is supported. Note : It contains under planning.
■ MACRO LIBRARY 1. Unit cell Flip Flop, with clear/preset (support for Mux-D Scan, with Lock up latch) Clock Buffer Other combination circuits (approximately 50 different types) 2. APLL Input frequency : 25 MHz to 800 MHz Output frequency : 400 MHz to 800 MHz User frequency : 25 MHz to 800 MHz Phase shift : 0/90/180/270 deg. 3. SRAM 1R1W-SRAM : 32 words × 40 bits 2RW-SRAM : 512 words × 40 bits Bit Select 1 : 1, 2 : 1, 4 : 1, 8 : 1
1 RW operation accesses specified port bit-width
- I/O H S T L *1 (250 MHz) 2.5 V LVCMOS (200 MHz (input buffer), 75 MHz to 100 MHz (output buffer)) PCML (250 MHz) LVDS (311 MHz) SSTL2 (250 MHz) PCI-66 * 2 (66 MHz) P C I - X *2 (133 MHz) 3.3 V tolerant (200 MHz (input buffer), 75 MHz to 100 MHz (output buffer)) *1 : Needs 1.5 V power supply *2 : As the I/F is 3.3V tolerant, it does not satisfy the PCI standard in some cases. Dedicated for Giga Frame SPI-4P2 (622 Mbps to 800 Mbps) XAUI (3.125 Gbps) Fibre Channel (1.0 Gbps, 2.0 Gbps) Serial Rapid IO (1.25 Gbps, 2.5 Gbps, 3.125 Gbps) PCI Express (2.5 Gbps) 5. Memory interface DDR-SDRAM (400 Mbps) QDR-SDRAM (400 Mbps) Peer to Peer SDR (200 Mbps) Peer to Peer DDR (200 Mbps) SDR-SDRAM (167 Mbps)
■ ABSOLUTE MAXIMUM RATINGS (VSS = 0 V) *1 : Different limit values apply for LVDS, etc. *2 : Maximum supply current in normal operation. Supply current depends on the frame or the package. *3 : Maximum output current in normal operation *4 : Required when using HSTL I/O. WARNING: Semiconductor devices can be permanently dam aged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. Parameter Symbol Application Rating Unit Min Max Power supply voltage VDD VDDI (Core) − 0.5 1.8 V VDDE (for 2.5 V CMOS I/Os, 3.3 V Tolerant I/Os) − 0.5 3.6 V VDDE (for 1.5 V I/Os*4) − 0.5 3.6 V Input voltage *1 VI 2.5 V CMOS − 0.5 VDDE + 0.5 ( ≤ 3.6) V 3.3 V Tolerant − 0.5 VDDE + 3.6 ( ≤ 4.0) V Output voltage VO 2.5 V CMOS − 0.5 VDDE + 0.5 ( ≤ 3.6) V 3.3 V Tolerant (H/L-State) − 0.5 VDDE + 0.5 ( ≤ 4.0) V 3.3 V Tolerant (Z-State) − 0.5 4.0 V Storage temperature Tst ⎯ − 55 + 125 °C Operation junction temperature Tj ⎯ − 40 + 125 °C Power supply pin current *2 ID Each VDDE pin ⎯ 180 mA Each VDDI pin ⎯ 200 mA Each VSS pin ⎯ 200 mA Output current *3 IO
2.5 V CMOS ⎯± 10 mA
3.3 V Tolerant ⎯± 7.5 mA
■ RECOMMENDED OPERATING CONDITIONS (VSS = 0 V) * : Applicable to HSTL I/O. WARNING: The recommended operating conditions are require d in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. Parameter Symbol Value Unit Min Typ Max Power supply voltage Power supply voltage for core VDDI 1.1 1.2 1.3 V Power supply voltage for 2.5 V I/Os VDDE 2.3 2.5 2.7 V Power supply voltage for 1.5 V I/Os * VDDE 1.4 1.5 1.6 V “H” level input voltage
2.5 V CMOS
1.7 ⎯ VDDE + 0.3 V 3.3 V Tolerant 1.7 ⎯ 3.6 V “L” level input voltage − 0.3 ⎯ 0.7 V 3.3 V Tolerant − 0.3 ⎯ 0.7 V Operation junction temperature Tj − 40 ⎯+ 125 °C
■ ELECTRICAL CHARACTERISTICS 1. DC CHARACTERISTICS (VDDI = 1.2 V ± 0.1 V, VDDE = 2.5 V ± 0.2 V, VSS = 0 V, Tj = − 40 °C to + 125 °C) * : The input leak current may exceed the above value if an input buffer with pull-up or pull-down resistor is used. Note : Refer to the application note for details of HSTL I/O. 2. AC CHARACTERISTICS *1 : Delay time = propagation delay time, enable time, and disable time. *2 : typ can be estimated from the cell specification. *3 : Measurement condition Note : Obtains the tpd max corresponding to the maximum junction temperature Tj. ■ I/O PIN CAPACITANCE (Tj = +25 °C, VDDE = VI = 0 V, f = 1 MHz) Note : The capacity depends on the package, pin positions, and similar. Parameter Symbol Conditions Value UnitMin Typ Max “H” level output voltage VOH IOH = − 100 µAV D D E − 0.2 ⎯ VDDE V “L” level output voltage VOL IOL = 100 µA0 ⎯ 0.2 V Input leak current * IL ⎯− 10 ⎯+ 10 µA Pull-up/Pull-down resistor RP
2.5 V CMOS pin,
VIL = 0 V at pull-up, VIH = VDDE at pull-down 10 25 55 k Ω
3.3 V Tolerant pin,
VIH = 3.0 V to 3.6 V at pull-down 12 33 85 k Ω Parameter Symbol Value UnitMin Typ Max Delay time tpd * 1 typ *2 × tmin *3 typ *2 × ttyp *3 typ *2 × tmax *3 ns Measurement condition tmin ttyp tmax Parameter Symbol Value Unit Input pin CIN Max 16 pF Output pin COUT Max 16 pF I/O pin CI/O Max 16 pF
■ DESIGN METHODOLOGY T o make development faster, the number of layers customizable in AccelArray is restricted to 3 to 4. Blocks that do not need to be redesigned for each product can be designed onc e and then incorporated into the architecture. As only 3 to 4 customizable layers are available for development of each product, the requirements of the layout tool are low. The requirements for timing design, where excessive complexity causes convergence to be slow, are also low. As result, the time require d for design work is reduced. Primarily, tools supplied by Fujitsu are used for logic design. A special-purpose tool is used to determine the pi n layout. This produces speedy and reliable results. ■ SUPPORT TOOL Frame estimation FUJITSU LIMITED : FEST A Pin assignment FUJITSU LIMITED : P ASTEL Logic synthesis Synopsys, Inc. : Design Compiler, Cadence Design Systems, Inc. : BuildGates Physical synthesis Synplicity, Inc. : Amplify AccelAllay Format verification Cadence Design Systems, Inc. : Conformal ASIC, Synopsys, Inc. : Formality FUJITSU LIMITED : ASSURE Delay calculation FUJITSU LIMITED : LCADFE Timing analysis Synopsys, Inc. : PrimeTime, FUJITSU LIMITED : GIST A Simulation Cadence Design Systems, Inc. : NC-Verilog/NC-VHDL, Synopsys, Inc. : VCS, Mentor Graphics Corporation : ModelSim, FUJITSU LIMITED : LCADFE L a y o u t FUJITSU LIMITED : AccelBuilder Power calculation FUJITSU LIMITED : PScope Power analysis Cadence Design Systems, Inc. : VoltageStorm T est synthesis FUJITSU LIMITED : DFTPlanner A T P G FUJITSU LIMITED : FANTCAD/X-Pax/TERBAN Validation FUJITSU LIMITED : LCADVL Fault simulation FUJITSU LIMITED : FANSCAD Note : The company names and the product names are the trademarks or registered trademarks of their respective owners.
■ FRAME LINE UP 2 groups are provided depending on the I/O transmission speed: Mega Frame (400 Mbps) and Giga Frame (622 Mbps to 3.125 Gbps). Mega Frame Line Up *1 : Actual available I/O count varies with the interface type. *2 : ARM9 core is supported. Giga Frame Line Up (including frames under planning) * : Actual available I/O count varies with the interface type. ■ PACKAGE High pin count FC-BGAs using fine solder bump pitch technology are available for high speed data networking applications. Frame name M20 M30 M40 M50 M52 A50*2 I/O cell count *1 696 824 952 1176 1176 1176 FF cell count ( × 1000) 50 70 93 150 233 186 Available gate count ( × 1000) 720 1008 1344 2160 3689 2872 ASIC equivalent gate count ( × 1000) 1219 1707 2276 3658 6019 4736 SRAM size (Kbits) 2RW-SRAM 1680 2240 2880 4400 2400 2960 1R/1W-SRAM 90 105 120 150 150 150 Total (Max) 1770 2345 3000 4550 2550 3110 PLL macro count 888888 Package (The value inside [ ] is body size, Ball pitch 1.00 mm) FC-BGA729 [29 mm sq.] ⎯⎯⎯⎯⎯ FC-BGA961 [33 mm sq.] ⎯⎯⎯ FC-BGA1156 [35 mm sq.] ⎯ FC-BGA1681 [42.5 mm sq.] ⎯⎯⎯ Frame name G30 G40 G45 G50 G55 4 channels G-phy (Tx + R x ) 34262 S-phy (Tx + R x ) 00202 I/O cell count (excluding high-speed IF) * 612 688 554 864 760 FF cell count ( × 1000) 69 93 93 206 149 Available gate count ( × 1000) 1007 1343 1343 3133 2158 ASIC equivalent gate count ( × 1000) 1706 2275 2275 5196 3656 SRAM size (Kbits) 2RW-SRAM 1960 2560 2560 3040 4000 1R/1W-SRAM 45 52 52 75 67 Total (Max) 2005 2612 2612 3115 4067 PLL macro count 88888 Package (The value inside [ ] is body size, Ball pitch 1.00 mm) FC-BGA961 [33 mm sq.] ⎯⎯ FC-BGA1156 [35 mm sq.] FC-BGA1681 [42.5 mm sq.] ⎯⎯⎯
All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device; Fujitsu does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. Fujitsu assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any ot her right of Fujitsu or any third party or does Fujitsu warrant non-infringement of any third-party’s intellectual property right or other right by using such information. Fujitsu assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon syst em), or (2) for use requiring extremely high reliability (i.e., su bmersible repeater and artificial satellite). Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design m easures into your facility and equipment such as redundancy, fi re protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan. F0506 © 2005 FUJITSU LIMITED Printed in Japan