CA3250 ETC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
- EE — = = = CE SOLED STATE OL DE) 3875081 OOL4LE3 5 eS Interface Circults ~ Advance Information/ Preliminary Data CA3250, CA3251 General-Purpose High-Current T-43°25 : N-P-N Transistor Arrays (CA3251 - Common-Emitter Array . CA3250 - Common-Collector Array Features: «8 transistors permit a wide range of applications in either a common-emitter (CA3251) or common-colloctor (CA3250) configuration & High Ic: 100 mA max. = LOW Vegan (at 50 mA): 0.4 V typ. RCA-CA3250° and CAS251¢ consist of eight high-current Applications: (to 100 mA) silicon n-p-n transistors on @ common —& Drivars for: monolithic substrate. The CA3251 Is connected In a Incandescent display devices ‘common-emitter configuration and the ' CAS3250is connected LED (e.g. RCA-40736R GaAs High-Efficiency Emitting In a common-collector configuration. Diode) Relay control Formerly RCA Development Type Nos. TA11550 and Thyristor firing TA11551. dle Lash Lg ls | nl. Late Lt Lat ahh counonte-—* | 10 syosrnate couuon se 2 | 10 ne @ (b) (COMMON-COLLECTOR CONFIGURATION COMMON-EMITTER CONFIGURATION Fig. 1 ~ Functional diagrams of types CA3260 and CA9251. File Number 1684 eee _— 171
© E SOLID STATE OL DEM) 3875082 OOLHI24 7 BH +-.y3-25 imerace Circurts CA3250, CA3251 ‘The GA3250 and CA3251 are capable of directly driving TD62081AP series. It may be necessary, however 4o insert Moon-segment and decimal point displays such as in each base a series resistance to limit the In to 20 mA. incandescent and light-emitting diode (LED). These types Incandescent an ane olyof other drive applications, [NOC A360 an nae einen 16 {8-lead dual-in- Fr ie a soatroland thyretor tring line plastic package (E suffix), and in an 18-lead dual-in-line - frit seal ceramic package (F suffix), which includes @ insome applications, the CAS250is functionally compatible separate substrate connection (C3290 only) for maximum incom PP cner power UDNZS80A. The CAS251 is flexibility in circuit design. Both types are also available in Tunctionally compatible with the ULN2800A series and the chip form (H sutflx). “The following ratings apply for each transistor in the device: sang TO EMIPTER VOLTAGE (Veed) vossssasssss-cscsseceecseecssosssssvsssstassnsssssssressceeesaeenenssnnssss515 OY eee roe TOBAGE VOLTAGE (Veto). ao. ssssssesscccececeeceeseovevsnususuvssssanansssssssscecrereanannnnnnssssssices BOY soe OR TO-SUBSTAATE VOLTAGE (Vel ss. .sssscccssssssececesesvessececcesnensssscensnssssssennnnnsensssscnttieces BAY oo erro RAGE VOLTAGE (Vero) sascossrvvsssussssassesceceececcececsscusnonesnevsnsananatassscsceceseesrannenesssss ss G8 EMT ETOR CURRENT () cosccrscesscsscccessnvesscccoososuvcccecennurieececsssssnssststesnnessssresenssassereceestss ROMA ooo eeeeeerrrmrmrrmmrrcrccn EE aaceccceneenanececssssensscenannenacennensss 0 IMA POWER DISSIPATION: Seen MEMO MON evcsscssssssssssssssssceeeeecceeeseesertsausssssnsnsaseceeecereresssssessesesnenenennesenesss7 200 0M) a EEE DDUSSRDODOESnnOEE EEE SESEESEEELLESEESSSESSESCEOOEEERO CRED Cd See i enneeeene eee iasectnceeeseeseeseeeassneees ara Linea 887 mE "AMBIENT TEMPERATURE RANGE: Me en rerasraseessseeeescsessnnssisissnnnsssssseneeeesereresssrorsossssssnsscsseeeeeeereres SBIO ARG Ree enn nn crrrrcmmcnce i iintsssseceeccesesestesrarassssssssnaeaceereeess C510 1500 LEAD TEMPERATURE (OURING SOLDERING): « The collector of each transistor of the CA3260 and CA3261 Is Isolated from the substrate by an integral diode, The substrate must be cre acto tase nich Is more negative than any collector voltage in order to meintain Isolation between transistors and provide connotea ae tosaction To avold undesired coupling betwaen transistors, the substrate terminal (10) ofthe CA$260 should be maintained at Danes DG or signal (AG) ground. A suitable bypass capacitor can be used to establish a signal ground ‘The substrate of the CAS251 isinternally connected to the common-emitter terminal No.9 to makeit more compatible with existing Industry types. ELECTRICAL CHARACTERISTICS AT Tx = 25°C FOR EQUIPMENT DESIGN uimiTs ‘TEST CONDITIONS bam [ve [wm | UNITS Collector-to-Substrate Breakdown Voltage Viena | _ei= 500 HA, I= 0. le= 0 [2 | « |— |v | Colectorto-EmiterGreakdown Votage Vanao | te=tmAte-o | ve | a | — | v | Emitterto-Base Breakdown Voltage Vane | e=s00ua | 6 | se | - |v | DG Forward-Current Transfer Ratio te | Veer0svite=30ma | 90 | 68 | — [ — | Baso-to-Emitter Saturation Voltage Von | e-a0matestma | — [oe | ro | v Collector-to-Emitter Saturation Voltage Veun | te=30mAe=tma | — | o27 | os | | Collector-Cutott-Current tae | vers tove=o | — | = {10 | oa | Coletor-Cutt-Curen tw [varwvieco | 1 - | + | | 972 = eee
G E SOLID STATE O01 a | 3675U8h UULsLeES 7 i ee lnterface Circults CA3250, CA3251 TYPICAL STATIC CHARACTERISTICS FOR EACH TRANSISTOR OF TYPES CA3250 AND CA3251_ - BO] coulecTon = TO-“EMTTER VOLTS (Voeh'S TS] sev 0c FORWARD CURRENT TRANSFER RATIO BpeI*IO] BRP aE Ne ne 03] 3 el TS S yy; - a 2. aa srl] i le arc Fs... p} Be STA Ee oe : cal 3 fly | ee TH Pea CL beac | TCO Le aT SEK eT coucterde MILLIAMPERES (Ze? COLLECTOR WILLIABPERES (Ic) sacs-irase vass-ireeo Fig. 2- DC: Forward-current transferratio as @ function of collector Fig. 3- Bese-to-emitter saturation voltage 3 4 function of collector currant current. SET EE TORR EGRET TRATSEER RATIO TH peP TO TET SET FoRWaRG SORA TRARSTER PATO TapeTO Bata sereaatne tresre SGionins ewrcnaTont (raletO°e Fa Bt A Z B a H lg °* FA Bi Eee 2 EE 1B 308] 3 B ES 0 A : fae ww ey TET VA b ru | al : “ | Pye) Peer a aT ee er a a rr) couecTon WILLAMPERES (Ze) COLLECTOR MLLIANBERES (Te secs-seeor sece-sesoe Fig. 4- Collector-to-omitter saturation voltage as & function of Fig. 5 Collactor-to-emitter saturation voltage es a function of collector current at Ta = 26°C. collector current at Ta= 70°C. TYPICAL READ-OUT DRIVER: APPLICATIONS wn va chxes0 vt w (COMMON COLLECTOR) INEROESEET orseuar ero cue Hee Loca DECODER (COMMON EMITTER) seca anno awe RESISTANCE FOR RIS DETERMINED BY THE RELATIONSHIP pe Ler Mee MEILEOD WHERE: Vpr INPUT PULSE Tiaeor wee
0 FR pr ge LED ‘eR HE
Fig. 6 - Schematic diagram showing one transistor: ‘of the CA3251 Fig. 7 - Schematic diagram showing one transistor of the CA3250 driving one segment of an incandescent display. driving a light-emitting diode (LED).