CA3039 INTERSIL | Alldatasheet

Document overview

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Technical content

Features

  • Six Matched Diodes on a Common Substrate

Applications

  • Ultra-Fast Low Capacitance Matched Diodes for Applications in Communications and Switching Systems
  • Balanced Modulators or Demodulators
  • Ring Modulators
  • High Speed Diode Gates
  • Analog Switches

Description

The CA3039 consists of six ultra-fast, low capacitance diodes on a common monolithic substrate. Integrated circuit construction assures excellent static and dynamic matching of the diodes, making the array extremely useful for a wide variety of applications in communication and switching systems. Five of the diodes are independently accessible, the sixth shares a common terminal with the substrate. For applications such as balanced modulators or ring modulators where capacitive balance is important, the substrate should be returned to a DC potential which is significantly more negative (with respect to the active diodes) than the peak signal applied. Pinouts

Ordering Information

TEMP. RANGE ( oC) PACKAGE PKG. NO. CA3039 -55 to 125 12 Pin Metal Can T12.B CA3039M -55 to 125 14 Ld SOIC M14.15 CA3039M96 -55 to 125 14 Ld SOIC Tape and Reel M14.15 CA3039 (SOIC) TOP VIEW CA3039 (METAL CAN) TOP VIEW NC SUBSTRATE NC D 5 D 2 D 6D SD 4 D 3 D 1 D 5 D 4 D 3 D 2 D 1 D 6 D S CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143| Copyright © Intersil Corporation 1999

Absolute Maximum Ratings Thermal Information (Terminal 1, 4, 5, 8 or 12 to Terminal 10) Operating Conditions Thermal Resistance (Typical, Note 1)θJA (oC/W) θJC (oC/W) oC (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical SpecificationsTA = 25oC; Characteristics apply for each diode unit, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS DC Forward Voltage Drop (Figure 1) V F IF = 50µA - 0.65 0.69 V IF = 1mA - 0.73 0.78 V IF = 3mA - 0.76 0.80 V IF = 10mA - 0.81 0.90 V DC Reverse Breakdown Voltage V (BR)R IR = -10µA5 7 - V DC Reverse Breakdown Voltage Between Any Diode Unit and Substrate V(BR)R IR = -10µA2 0 - - V DC Reverse (Leakage) Current (Figure 2) I R VR = -4V - 0.016 100 nA DC Reverse (Leakage) Current Between Any Diode Unit and Substrate (Figure 3) IR VR = -10V - 0.022 100 nA Magnitude of Diode Offset Voltage (Note 2) (Figure 1) IF = 1mA - 0.5 5.0 mV Temperature Coefficient of |VF1 - VF2| (Figure 4) I F = 1mA - 1.0 - µV/oC Temperature Coefficient of Forward Drop (Figure 5) IF = 1mA - -1.9 - mV/ oC DC Forward Voltage Drop for Anode-to- Substrate Diode (DS) VF IF = 1mA - 0.65 - V Reverse Recovery Time t RR IF = 10mA, IR = -10mA - 1.0 - ns Diode Resistance (Figure 6) R D f = 1kHz, IF = 1mA 25 30 45 Ω Diode Capacitance (Figure 7) C D VR = -2V, IF = 0 - 0.65 - pF Diode-to-Substrate Capacitance (Figure 8) C DI VDI = 4V, IF = 0 - 3.2 - pF NOTE: 2. Magnitude of Diode Offset Voltage is the difference in DC Forward Voltage Drops of any two diode units. V F1 V F2– ∆ V F1 V F2– ∆V F CA3039

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FIGURE 7. DIODE CAPACITANCE (D 1 - D5) vs REVERSE FIGURE 8. DIODE-TO-SUBSTRATE CAPACITANCE vs