CA3019 INTERSIL | Alldatasheet
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a ee G E SOLID STATE 01 DEgj 3875081 oo14ss4 oO i | irae aE a cer te Ultra-Fast Low-Capacitance Matched Diodes For Applications In Communications bd and Switching Systems Features: = Excellent diode match = Low leakage current = Low pedestal voltage when gating . = Companion Application Note, ICAN-5269: "Application of the RCA-CA8019 Integrated-Ciroult Diode Array” The RCA-CA3019 consists of six ultra-fast, low capacitance Applications: diodes on a common monolithic substrate. Integrated clr- = Modulator cult construction assures excellent static and dynamic Mixer matching of the diodes, making the array extremely useful = Balanced modulator for a wide variety of applications in communication and & Analog switch ‘switching systems. m Diode gate for chopper-modulator Four of the diodes are Internally connected as a"quad” and applications two are independently accessible. The substrate Is inter- nally connected to the 10-lead TO-5-style case. should be returned to a DC potential which is significantly For applications such as belanced modulators orringmod- more negative (with respect fo the active diodes) than the Lletora where capacitive balanceisimportant, thesubstrate peak signal applied. Fig. 1 — Schematic Diagram. Poisivsaiszsisesseeaeeeatartistiecreeeeeeseoos fneent vorceaTae a}—se ea Fig. 2— DG forward voltage drop (ony diode) at ieeasedtesbensttbanteeeatestgeteat saute pay HY Seestnggesnaseasestes tuteniussnarseneaseasa| BScsee te aeseeEeSSu sire eesttagiineereattaas| MMT TOPERATIME TIF HSE Sa att ee ea Fig 2 Revere leokape) current lany diode) te na incon ‘as. function of temperature. ta 4 ~ Of reverse voltage. . File Number 236
LT SS ST eS eS RSNA nee ails ist G E SOLID STATE OL DEpf 3875081 DOL4SIS 2 : are Absolute-Maximum Ratings: Absolute-Maximum Voltage Limits: 4 DISSIPATION: VOLTAGE “ Anyone diode unit... 20max. mW [TERM,| LIMITS _|CONDITIONS TEMPERATURE RANGE: [wec. | ros.[renm.[ vour. MPERATURE RANGE: eseoszoo cc = [_1 | -3 [zt 7 | 6 | Opening ss. B5tosts *c = [2 [a Pat 7 [6 | De Forward Current, ip. . 28 MA tae Peak Recurrent Forward [3 | =s [eat 7 3 | Current, ty. + = = 100 MA [4 [-3 [+2] 7 J -6 | Peak Forward Surge [5 | -3 |i] 7 [6 Current, (surge). 5 5 100 MA Ec VOLTAGE: See Table [oe | -s[e[ 7 | 6 [3 | -a [eet 7 [6 [10 [NOCONNECTION __| INTERNALLY CONNECTED. CASE TO TERMINAL 7 DO NOT GROUND ELECTRICAL CHARACTERISTICS, at Tat 28°C Characteristics Apply for Each Diode Unit, Unless Otherwise Specified CHARACTERISTICS SPECIAL TEST CONDITIONS | _TYPE CA3019 [in| Typ. [ax DC Reverse Breakdown Voltage| DC Reverse Current (Ip) = ~10HA ee | | IDC Reverse Breakdown Voltagq Between any Diode Unit and | OC Reverse Current {I q)= —10 HA Substrate DC Reverse (Leakage) Current | OC Reverse Voltage (VR) =—-4V [_— [0.0086] 10] - [DC Reverse (Leakage) Current Between any Diode Unit and | DC Reverse Voltage (VR) = —4 V Substrate ‘Magnitude of Diode Offset Voltage (Difference in DC ponaae Voltage Dropsot | °C Forwerd Current (Ip}= 1 mA my| any Two Diode Units) Single Diode Capacitance Frequency (f) = 1 MHz DC Reverse Voltage (Vp) = -2V Frequency (f) = 1 MHz DC Reverse Voltage (Va) - between Terminal 2,5,6, or Bot Diode Quad-to-Substrate Diode Quad and Terminal 7 Capacitance (Substrate) = -2 V Terminal 2 or 6 to Terminal 7 | -[ 4a] —] oF] Freer Sorbo Teri? = [27 =| Series Gate Switching mv Pedestal Voltage ee 647