C945

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SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURE z Excellent hFE Linearity z Low noise z MARKING:CR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 5 V Collector cut-off current ICBO V CB=60V, IE=0 0.1 uA Collector cut-off current ICER VCE=55V,R=10MΩ 0.1 uA Emitter cut-off current IEBO V EB=5V , I C=0 0.1 uA hFE(1) V CE=6 V , I C=1mA 130 400 DC current gain hFE(2) V CE=6 V , I C=0.1mA 40 Collector-emitter saturation voltage VCE(sat) I C=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) I C=100mA, IB=10mA 1 V Transition frequency fT V CE=6V,IC=10mA,f =30 MHz 150 MHz Collector output capacitance Cob V CB=10V,IE=0,f=1MHZ 3.0 pF Noise figure NF VCE=6V,IC=0.1mA Rg=10kΩ,f=1kMHZ 4 10 dB CLASSIFICATION OF h FE(1) Rank L H Range 130-200 200-400 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 2012-0 WILLAS ELECTRONIC CORP. C945

0.1 1 10 100 200 400 600 800 1000 1 10 100 100 1 10 100 100 1000 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 0.25 0.1 1 10 COMMON EMITTER T a=25℃ 24uA 9uA 30uA 27uA 21uA 18uA 15uA 12uA 6uA IB=3uA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) Static Characteristic 30.3 150 VBEsat —— IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) β=10 Ta=100℃ Ta=25℃ 3030.33031 50 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=100℃ Ta=25℃ β=10 VCEsat —— IC 300 3030.7 300 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ VCE=6V IChFE —— 150 Typical Characteristics COLLECTOR POWER DISSIPATION PC (W) AMBIENT TEMPERATURE Ta ( )℃ PC —— Ta CAPACITANCE C (pF) REVERSE BIAS VOLTAGE V (V) Cob Cib f=1MHz IE=0 /IC=0 Ta=25℃ VCB / VEBCob / Cib —— 2012-0 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate Transistors C945

Dimensions in inches and (millimeters) SOT-23 Rev.D .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)MIN. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)MAX. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-0 WILLAS ELECTRONIC CORP. SOT-23 Plastic-Encapsulate Transistors C945