C945 WEITRON | Alldatasheet
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http://www.weitron.com.tw WEITRON C945 NPN Transistors Lead(Pb)-Free Pb TO-92 1 2 3 1. EMITTER 2. COLLECTOR 3. BASE 1/4 08-Feb-06 °CJunction Temperature Tj TSTG +150 0.4 Storage Temperature -40 to + 150
Collector Output Capacitance VCB = 10V, IE = 0, f = 1MHz Noise figure VCE = 6V, IC = 0.1mA, Rg = 10kΩ, f = 1KMHz TransitionFrequence VCE = 6V, IC = 10mA, f = 30MHz - - 700 V ON CHARACTERISTICS ELECTRICALCHARACTERISTICS (TA=25Cunlessotherwisenoted)(Countinued) CLASSIFICATION OFhFE1 Rank Range YO 70-140 0.3 WEITRON http://www.weitron.com.tw VBE(sat) V1.0 200 - 3.0 pF- 4.0 10 dB- BLGR 120-240 200-400 350-700 Cob NF MHz VCE(sat) fT Base-Emitter Voltage IC=100mA, IB=10mA hFE1 hFE2 DC Current Gain VCE=6.0V, IC=1mA VCE=6.0V, IC=0.1mA Collector-Emitter Saturation Voltage IC=100mA, IB=10mA C945 2/4 08-Feb-06 Characteristics Symbol Min Typ Max Unit
http://www.weitron.com.tw C945 3/4 08-Feb-06 FIG1. Total Power Dissipation vs Ambient Temperature FIG.2 Collector Current vs Collector to Emitter Voltage FIG.4 Gain Bandwidth Product vs Emitter Current vs Collector Current FIG.3 Collector and Bade Saturation Voltage
http://www.weitron.com.tw Dim A B C D E G H J K L Min 3.30 1.10 0.38 0.36 4.40 3.43 4.30 Max TO-92 TO-92 OutlineDimensions unit:mm 3.70 1.40 0.55 0.51 4.70 4.70 2.64 14.50 1.270TYP E C H A B D L J K G 2.44 14.10 C945 4/4 08-Feb-06