C945 TGS | Alldatasheet
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TO-92 Plastic-Encapsulate Transistors C945 TRANSISTOR (NPN ) FEATURE z Excellent hFE linearity z Low noise z Complementary to A733 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M in Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C=1mA , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO I C=100 A , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO I E=100 A, IC=0 5 V Collector cut-off current ICBO V CB=60V, IE=0 0.1 Collector cut-off current ICEO V CE=45V 0.1 Emitter cut-off current IEBO V EB=5V ,IC=0 0.1 hFE(1) V CE=6V , IC=1mA 70 700 DC current gain hFE(2) V CE=6V , IC=0.1mA 40 Collector-emitter saturation voltage VCE(sat) I C=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) I C=100mA, IB=10mA 1 V Transition frequency fT V CE=6V,IC=10mA,f=30MHz 200 MHz Collector output capacitance Cob V CB=10V,IE=0,f=1MHz 3.0 pF Noise figure NF VCE=6V,IC=0.1mA RG=10kΩ,f=1MHz 10 dB CLASSIFICATION OF h FE(1) Rank O Y GR BL Range 70-140 120-240 200-400 350-700 TO-92 1.EMITTER 2.COLLECTOR 3. BASE μA μA μA A,Jan,2011 μ μ , IB=0 TIGER ELECTRONIC CO.,LTD