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Technical content
60V , 0.15A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente 17-Dec-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Excellent hFE Linearity Low noise Complementary to A733 MARKING Product Marking Code C945 CR
PACKAGE INFORMATION
SOT-23 3K 7’ inch CLASSIFICATION OF h FE(1) Product-Rank C945-L C945-H Range 130-200 200-400 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage V CBO 60 V Collector - Emitter Voltage V CEO 50 V Emitter - Base Voltage V EBO 5 V Collector Current - Continuous I C 150 mA Collector Power Dissipation PC 200 mW Junction, Storage Temperature T J, TSTG 150, -55~150 ℃ ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage I C =100µA, IE =0 V (BR)CBO 60 - - V Collector-Emitter Breakdown Voltage I C = 1mA, IB =0 V (BR)CEO 50 - - V Emitter-Base Breakdown Voltage I E = 0.1µA, IC =0 V (BR)EBO 5 - - V Collector Cut-Off Current V CB = 60V, IE =0 I CBO - - 0.1 µA Collector Cut-Off Current V CE = 55V, R =10mΩ I CER - - 0.1 µA Emitter Cut-Off Current V EB = 5V, IC =0 I EBO - - 0.1 µA DC Current Gain VCE = 6V, IC = 1mA h FE(1) 130 - 400 VCE = 6V, IC = 0.1mA h FE(2) 40 - - Collector-Emitter Saturation Voltage I C = 100mA, IB = 10mA V CE(sat) - - 0.3 V Base-Emitter Saturation Voltage I C = 100mA, IB = 10mA V BE(sat) - - 1 V Transition frequency V CE = 6V, IC = 10mA, f=30MHz f T 150 - - MHz Collector output capacitance V CB = 10V, IE=0, f=1MHz C ob - - 3.0 pF Noise figure VCE=6V, IC=0.1mA, Rg=10kΩ, f=1kMHz NF - 4 10 dB SOT-23 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 Top View A L C B D G H JF K E 1 2
60V , 0.15A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente 17-Dec-2010 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES