C945 RECTRON | Alldatasheet
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FEATURES
Case: Molded plastic* Epoxy: UL 94V-O rate flame retardant* Lead: MIL-STD-202E method 208C guaranteed* Mounting position: Any* Weight: 0.008 gram SOT-23 C945 2007-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CLASSIFICATION OF hFE(1) RANK Collector-base breakdown voltage(IC= 1mA, IE=0) Collector-emitter breakdown voltage(IC= 0.1mA, IB=0) Emitter-base breakdown voltage(IC= 0.1mA, IB=0) SYMBOL MAXMIN 130 150 0.3 MHZ 0.1 0.1 0.1 V(BR)CBO V(BR)CEO VCE(sat) V(BR)EBO UNITS V V V V V SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) Dimensions in inches and (millimeters) 0.118(3.00) 0.012(0.30) 0.020(0.50) 0.003(0.08) 0.006(0.15) 0.110(2.80) 0.019(2.00) 0.071(1.80) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.043(1.10) 0.035(0.90) 0.004(0.10) 0.000(0.00) BASE EMITTER COLLECTOR MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.047(1.20) 0.055(1.40) ICBO hFE mA mA mAEmitter cut-off current(VEB= 5V, IC=0) Collector cut-off current(VCB= 60V, IE=0) Collector cut-off current(VCB= 45V, IE=0) DC current gain(VCE= 6V, IC= 1mA) DC current gain(VCE= 6V, IC= 0.1mA) Collector-emitter saturation voltage(IC=100 mA, IB= 10mA) Base-emitter saturation voltage(IC= 100 mA, IB= 10mA) Base-emitter voltage(IE= 310 mA) Transition frequency(VCE= 6V, IC= 10mA, f= 30MHZ) ICEO IEBO Range Marking CHARACTERISTICS * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.15 A * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC VBE(sat) fT L 130~200 CR H 200~400 400 - TYP 40 - --
1.4 VVBEF - -
Note : "Fully ROHS compliant", "100% Sn plating (Pb-free)".
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