C945 DGNJDZ | Alldatasheet
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TO-92 Plastic-Encapsulate Transistors C945 TRANSISTOR (NPN ) FEATURE Excellent hFE linearity Low noise Complementary to A733 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C=1mA , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO I C=100 A , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO I E=100 A, IC=0 5 V Collector cut-off current ICBO V CB=60V, IE=0 0.1 Collector cut-off current ICEO V CE=45V 0.1 Emitter cut-off current IEBO V EB=5V ,IC=0 0.1 hFE(1) V CE=6V , IC=1mA 70 700 DC current gain hFE(2) V CE=6V , IC=0.1mA 40 Collector-emitter saturation voltage VCE(sat) I C=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) I C=100mA, IB=10mA 1 V Transition frequency fT V CE=6V,IC=10mA,f=30MHz 200 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 3.0 pF Noise figure NF VCE=6V,IC=0.1mA RG=10k ,f=1MHz 10 dB CLASSIFICATION OF hFE(1) Rank O Y GR BL Range 70-140 120-240 200-400 350-700 TO-92 1.EMITTER 2.COLLECTOR 3. BASE A A A , IB=0 ï DONGGUAN NANJING ELECTRONICS LTD.,
A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4. 4.700 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 1.270 TYP 0.050 TYP