C945 GWSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 3
Technical content
MARKING: CR MAXIMUM RATINGS (T A =25℃ unless otherwise noted) S y mbol Pa r amete r V alue Units V CBO Collecto r -Base Vol t a g e 60 V V CEO Collecto r -Emitter Vol t a g e 50 V V EBO Emitte r -Base Vol t a g e 5 V I C Collector Cu r rent -Continuous 150 mA P C Collector Po w er Dissi p ation 200 mW T J Junction Tem p erature 150 ℃ T st g Stora g e Tem p erature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) CBO I C =100uA, I E V Collector-emitter breakdown voltage V(BR) CEO I C =1mA , I B V Emitter-base breakdown voltage V(BR) EBO I E =0.1mA, I C V Collector cut-off current I CBO V CB =60V, I E 0.1 µA Collector cut-off current I CER V CE =55V, R=10M Ω 0.1 µA Emitter cut-off current I EBO V EB =5V, I C 0.1 µA h FE(1) V CE =6V, I C =1mA 200 400 DC current gain h FE(2) V CE =6V, I C =0.1mA Collector-emitter saturation voltage V CE (sat) I C =100mA, I B =10mA 0.3 V Base-emitter saturation voltage V BE (sat) I C =100mA, I B =10mA V Transition frequency f T V CE =6V,I C =10mA,f =30 MHz 150 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MH Z 3.0 pF Noise figure NF V CE 6V, I C 0.1 mA R g kΩ k MH Z dB 1．BASE SOT-23 2．EMITTER 3．COLLECTOR C945 TRANSISTOR(NPN)
TRANSISTOR(NPN)
Plastic surface mounted package; 3 leads SOT-23 C945 TRANSISTOR(NPN)