KTC9014_10 KEC | Alldatasheet
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Technical content
- 3. 22 1/1 SEMICONDUCTOR TECHNICAL DATA KTC9014 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 1 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES
¡¤Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ¡¤Low Noise :NF=1dB(Typ.) at f=1kHz. ¡¤Complementary to KTC9015. MAXIMUM RATING (Ta=25¡É) TO-92 DIM MILLIMETERS A B C D F G H J K L
4.70 MAX
4.80 MAX
3.70 MAX
0.45 1.00 1.27 0.85 0.45 14.00 0.50
0.55 MAX
2.30 D 1 2 3 B AJ K G H F F L E C E C M N
0.45 MAXM
1.00N ELECTRICAL CHARACTERISTICS (Ta=25¡É) Note : hFE Classification A:60¡150, B:100¡300, C:200¡600, D:400¡1000 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 50 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA DC Current Gain hFE (Note) VCE=5V, IC=1mA 60 - 1000 Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V Transition Frequency fT VCE=10V, IC=1mA, f=100MHz 60 - - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF Noise Figure NF VCE=6V, IC=0.1mA, Rg=10k§Ù, f=1kHz - 1.0 10 dB CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Emitter Current IE -150 mA Collector Power Dissipation PC* 625 mW 400 Junction Temperature Tj 150 ¡É Storage Temperature Range Tstg -55¡150 ¡É * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW