ST2SC828 SEMTECH_ELEC | Alldatasheet
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D a t e d : 0 7 / 1 2 / 2 0 0 2 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three groups Q, R and S according to their DC current gain. On special request, thes e transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25oC) Value Symbol ST 2SC828 ST 2SC828A Unit Collector Base Voltage V CBO 30 45 V Collector Emitter Voltage V CEO 25 45 V Emitter Base Voltage V EBO 7 V Peak Collector Current I CM 100 mA Collector Current I C 50 mA Power Dissipation P tot 400 mW Junction Temperature T j 150 OC Storage Temperature Range T S -55 to +150 OC
D a t e d : 0 7 / 1 2 / 2 0 0 2 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ST 2SC828 / 828A Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit DC Current Gain at IC=2mA, VCE=5V Current Gain Group Q R S h FE hFE hFE 130 180 260 280 360 520 Collector Base Breakdown Voltage at IC=10μA ST 2SC828 ST 2SC828A V(BR)CBO V(BR)CBO V V Collector Emitter Breakdown Voltage at IC=2mA ST 2SC828 ST 2SC828A V(BR)CEO V(BR)CEO V V Emitter Base Breakdown Voltage at IE=10μA V(BR)EBO 7 - - V Collector Saturation Voltage at IC=50mA, IB=5mA VCE(sat) - 0.14 - V Base Emitter Voltage at IC=10mA, VCE=5V VBE - - 0.8 V Gain Bandwidth Product at IC=-2mA, VCE=10V fT - 220 - MHz Noise Figure at VCE=5V,IE=0.2mA, RG=2kΩ,f=1kHz NF - 6 - dB