C67070-A2505-A67

BSM25GD120DN2 EUPEC | Alldatasheet

Document overview

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• PDF pages: 9

Technical content

1 Oct-20-1997

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate Type V CE I C Package Ordering Code BSM 25 GD 120 DN2 1200V 35A ECONOPACK 2 C67076-A2505-A67 BSM 25 GD120DN2E3224 1200V 35A ECONOPACK 2K C67070-A2505-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage V CE 1200 V Collector-gate voltage R GE = 20 kΩ V CGR 1200 Gate-emitter voltage V GE ± 20 DC collector current T C = 25 °C T C = 80 °C I C A Pulsed collector current, t p = 1 ms T C = 25 °C T C = 80 °C I Cpuls Power dissipation per IGBT T C = 25 °C P tot 200 W Chip temperature T j + 150 °C Storage temperature T stg -40 ... + 125 Thermal resistance, chip case R thJC ≤ 0.6 K/W Diode thermal resistance, chip case R thJCD ≤ 1 Insulation test voltage, t = 1min. V is 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F sec IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56

2 Oct-20-1997

Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage V GE = V CE, I C = 1 mA V GE(th) 4.5 5.5 6.5 V Collector-emitter saturation voltage V GE = 15 V, I C = 25 A, T j = 25 °C V GE = 15 V, I C = 25 A, T j = 125 °C V CE(sat) 3.1 2.5 3.7 Zero gate voltage collector current V CE = 1200 V, V GE = 0 V, T j = 25 °C V CE = 1200 V, V GE = 0 V, T j = 125 °C I CES 0.5 0.8 mA Gate-emitter leakage current V GE = 20 V, V CE = 0 V I GES - - 180 nA AC Characteristics Transconductance V CE = 20 V, I C = 25 A g fs 10 - - S Input capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz C iss - 1650 - pF Output capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz C oss - 250 - Reverse transfer capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz C rss - 110 -

3 Oct-20-1997

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time VCC = 600 V, VGE = 15 V, IC = 25 A R Gon = 47 Ω td(on) - 75 150 ns Rise time VCC = 600 V, VGE = 15 V, IC = 25 A R Gon = 47 Ω tr - 65 130 Turn-off delay time VCC = 600 V, VGE = -15 V, IC = 25 A R Goff = 47 Ω td(off) - 400 600 Fall time VCC = 600 V, VGE = -15 V, IC = 25 A R Goff = 47 Ω tf - 50 100 Free-Wheel Diode Diode forward voltage IF = 25 A, VGE = 0 V, Tj = 25 °C IF = 25 A, VGE = 0 V, Tj = 125 °C VF 1.8 2.3 2.8 V Reverse recovery time IF = 25 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C trr - 0.13 - µs Reverse recovery charge IF = 25 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C Tj = 125 °C Q rr 2.3 µC

4 Oct-20-1997

Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 TC 100 120 140 160 180 W 220 Ptot Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C -1 10 0 10 1 10 2 10 A IC 10 0 10 1 10 2 10 3 V VCE DC 10 ms 1 ms 100 µs tp = 11.0µs Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 TC A IC Transient thermal impedance IGBT Zth JC = ƒ(tp) parameter: D = tp / T -3 10 -2 10 -1 10 0 10 K/W ZthJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

5 Oct-20-1997

Typ. output characteristics IC = f (VCE ) parameter: tp = 80 µs, Tj = 25 °C 0 1 2 3 V 5 VCE A IC 17V 15V 13V 11V Typ. output characteristics IC = f (VCE ) parameter: tp = 80 µs, Tj = 125 °C 0 1 2 3 V 5 VCE A IC 17V 15V 13V 11V Typ. transfer characteristics IC = f (VGE ) parameter: tp = 80 µs, VCE = 20 V 0 2 4 6 8 10 V 14 VGE A IC

6 Oct-20-1997

Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 25 A 0 20 40 60 80 100 120 140 nC 170 QGate V VGE

800 V600 V

Typ. capacitances C = f (VCE ) parameter: VGE = 0 V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VCE -2 10 -1 10 0 10 1 10 nF C Ciss Coss Crss Reverse biased safe operating area ICpuls = f(VCE ) , Tj = 150°C parameter: VGE = 15 V 0 200 400 600 800 1000 1200 V 1600 VCE 0.0 0.5 1.0 1.5 2.5 ICpuls/IC Short circuit safe operating area ICsc = f(VCE ) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 0 200 400 600 800 1000 1200 V 1600 VCE ICsc/IC

7 Oct-20-1997

Typ. switching time I = f (IC ) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω 0 10 20 30 40 A 60 IC 1 10 2 10 3 10 ns t tdon tr tdoff tf Typ. switching time t = f (RG ) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, IC = 25 A 0 20 40 60 80 100 120 140 Ω 180 R G 1 10 2 10 3 10 ns t tdon tr tdoff tf Typ. switching losses E = f (IC ) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω 0 10 20 30 40 A 60 IC mWs E Eon Eoff Typ. switching losses E = f (RG ) , inductive load , Tj = 125°C par.: VCE = 600V, VGE = ± 15 V, IC = 25 A 0 20 40 60 80 100 120 140 Ω 180 R G mWs E Eon Eoff

8 Oct-20-1997

Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj VF A IF Tj=25°C=125°CjT Transient thermal impedance Diode Zth JC = ƒ(tp) parameter: D = tp / T -3 10 -2 10 -1 10 0 10 1 10 K/W ZthJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

9 Oct-20-1997

Weight: 180 g