SIDC14D60E6 INFINEON | Alldatasheet

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Edited by INFINEON Technologies AI PS DD HV3, L 4173M, Edition 1, 7.01.02 Fast switching diode chip in EMCON-Technology This chip is used for:

  • EUPEC power modules and discrete devices FEATURES:
  • 600V EMCON technology 70 µm chip
  • soft , fast switching
  • low reverse recovery charge
  • small temperature coefficient Applications:
  • SMPS, resonant applications, drives A C Chip Type VR IF Die Size Package Ordering Code SIDC14D60E6 600V 30A 3.8 x 3.8 mm2 sawn on foil C67047-A4678- A001 MECHANICAL PARAMETER: Raster size 3.8 x 3.8 Area total / active 14.44 / 9.8 Anode pad size 3.08 x 3.08 mm2 Thickness 70 µm Wafer size 150 mm Flat position 180 deg Max. possible chips per wafer 1018 pcs Passivation frontside Photoimide Anode metallisation 3200 nm AlSiCu Cathode metallisation 1400 nm Ni Ag – system suitable for epoxy and soft solder die bonding Die bond electrically conductive glue or solder Wire bond Al, ≤ 500µm Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C

Edited by INFINEON Technologies AI PS DD HV3, L 4173M, Edition 1, 7.01.02 Maximum Ratings Parameter Symbol Condition Value Unit Repetitive peak reverse voltage VRRM 600 V Continuous forward current limited by Tjmax IF Single pulse forward current (depending on wire bond configuration) IFSM tP = 10 ms sinusoidal tbd Maximum repetitive forward current limited by Tjmax IFRM 90 A Operating junction and storage temperature Tj , Tstg -55...+150 °C Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified Value Parameter Symbol Conditions min. Typ. max. Unit Reverse leakage current IR VR=600V Tj=25 ° C 27 µA Cathode-Anode breakdown Voltage VBr IR=3mA Tj=25°C 600 V Forward voltage drop VF IF=30A Tj=25 ° C 1.25 V Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component Value Parameter Symbol Conditions min. Typ. max. Unit trr1 IF=30A Tj =25°C tbd Reverse recovery time trr2 di/dt=1400A/ ms VR=300V Tj =125°C ns IRRM1 Tj =25°C 50 Peak recovery current IRRM2 IF=30A di/dt=1400A/ ms VR= 300V Tj =125°C 53.3 A Qrr1 Tj=25 ° C 2.34 Reverse recovery charge Qrr2 IF=30A di/dt=1400A/ ms VR= 300V Tj=125 ° C 3.8 µC di rr1 /dt Tj= 25 ° C tbd Peak rate of fall of re verse recovery current di rr2 /dt IF=30A di/dt=1400A/ ms VR= 300V Tj=125 ° C A/ µs S1 Tj=25 ° C tbd Softness IF=30A di/dt=1400A/ ms VR= 300V Tj=125 ° C

Edited by INFINEON Technologies AI PS DD HV3, L 4173M, Edition 1, 7.01.02 CHIP DRAWING:

Edited by INFINEON Technologies AI PS DD HV3, L 4173M, Edition 1, 7.01.02 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet INFINEON TECHNOLOGIES / EUPEC tbd Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL -STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strasse 53 D-81541 München © Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be c onsidered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non -infringement, regarding circuits, descriptions and charts stated he rein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Repr esentatives world -wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies componen ts may only be used in life -support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life -support device or system, or to affect the safet y or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.